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Process for producing zno single crystal, self-supporting zno single-crystal wafer obtained by the same, self-supporting wafer of mg-containing zno mixed single crystal, and process for producing mg-containing zno mixed single crystal for use in the same

A self-supporting, single crystal technology, applied in single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of poor reproducibility, poor mobility of polycrystalline zinc oxide, etc. Stable operation and the effect of ensuring transparency

Inactive Publication Date: 2011-02-16
MITSUBISHI GAS CHEM CO INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It can be seen that if the method applied by the inventors of the present invention is used, when a thick ZnO single crystal is grown and the substrate used for growth is removed, a self-supporting ZnO single crystal can be produced, but there is the following problem: The flux composition on the used Pt jig as the base point for the cracks to develop during growth, cooling and grinding / grinding
[0018] On the other hand, in TFTs using zinc oxide, there are reports that white reproducibility is poor because the wavelength of the absorption end is only in the visible light range, and there are also opinions that polycrystalline zinc oxide has poor mobility.

Method used

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  • Process for producing zno single crystal, self-supporting zno single-crystal wafer obtained by the same, self-supporting wafer of mg-containing zno mixed single crystal, and process for producing mg-containing zno mixed single crystal for use in the same
  • Process for producing zno single crystal, self-supporting zno single-crystal wafer obtained by the same, self-supporting wafer of mg-containing zno mixed single crystal, and process for producing mg-containing zno mixed single crystal for use in the same
  • Process for producing zno single crystal, self-supporting zno single-crystal wafer obtained by the same, self-supporting wafer of mg-containing zno mixed single crystal, and process for producing mg-containing zno mixed single crystal for use in the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0110] A ZnO single crystal was produced by the liquid phase epitaxial growth method through the following steps. In a platinum crucible with an inner diameter of 75mmΦ, a height of 75mmh, and a thickness of 1mm, add raw materials ZnO, PbO, and Bi 2 o 3 33.20g, 829.53g and 794.75g respectively. At this time, the concentration of ZnO as the solute is 7mol%, and the concentration of PbO and Bi as the solvent 2 o 3 The concentration of PbO:Bi 2 o 3 =68.5 mol%: 31.5 mol%. Set the crucible filled with raw materials in Figure 4 In the shown furnace, the temperature of the bottom of the crucible was kept at about 840° C. for 1 hour, and stirred with a Pt stirring jig to dissolve. Thereafter, the temperature at the bottom of the crucible was lowered to about 790°C, and then a ZnO single crystal substrate with a +c plane dimension of 10mm×10mm×0.5mmt cultivated by the hydrothermal synthesis method was used as a seed crystal to contact the melt, while rotating at 30rpm The elev...

Embodiment 2-10 and comparative example 1

[0112] In addition to Ga 2 o 3 Except putting in a Pt crucible, a self-supporting ZnO single crystal was obtained in the same manner as in Example 1. In Example 10, the continuous shaft lifting is changed to the intermittent shaft lifting. That is, the process of stopping the shaft and raising the shaft by 100 μm after lapse of 16 hours was repeated 5 times, and a total of 500 μm was raised in 80 hours. The addition composition is shown in Table 1. Table 2 shows the physical properties of the obtained self-supporting film.

[0113] With Ga 2 o 3 With the increase of the added amount, the carrier concentration increases, and the carrier concentration in the self-supporting film of Example 9 added with 2100ppm of ZnO is 1.0×10 19 piece / cm 3 . From these results, it can be seen that by adding Ga2 o 3 , the carrier concentration can be controlled at 2.0×10 17 piece / cm 3 ~1.0×10 19 piece / cm 3 . On the other hand, for carrier mobility, without adding Ga 2 o 3 In Exam...

Embodiment 11-18 and comparative example 2

[0119] Will Al 2 o 3 A self-supporting ZnO single crystal was obtained in the same manner as in Example 1, except that the Pt crucible was filled with the composition shown in Table 3. In Example 18, the continuous shaft lifting was changed to the intermittent shaft lifting. That is, the process of stopping the shaft and raising the shaft by 100 μm after lapse of 16 hours was repeated 5 times, and a total of 500 μm was raised in 80 hours. Table 4 shows the physical properties of the obtained self-supporting film. With Al 2 o 3 The amount of addition increases, and the carrier concentration increases, and the carrier concentration in the self-supporting film of Example 17 that adds 2200ppm to ZnO is 1.0×10 19 piece / cm 3 . From these results, it can be seen that by adding Al 2 o 3 , the carrier concentration can be controlled at 2.0×10 17 piece / cm 3 ~1.2×10 19 piece / cm 3 . On the other hand, regarding the carrier mobility, without adding Al 2 o 3 In Example 11, i...

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Abstract

ZnO as a solute is mixed with a solvent, and the solute is melted. A seed-crystal substrate is brought into direct contact with the resultant melt, and the seed-crystal substrate is continuously or intermittently pulled up, whereby a ZnO single crystal can be grown on the seed-crystal substrate by liquid phase epitaxy. ZnO and MgO as solutes are mixed with a solvent, and the solutes are melted. A seed-crystal substrate is brought into direct contact with the resultant melt, and the seed-crystal substrate is continuously or intermittently pulled up to thereby grow an Mg-containing ZnO mixed single crystal by liquid phase epitaxy. Thereafter, the substrate is removed by abrasion or etching, and one c-plane side of the single crystal, said side having been grown by liquid phase epitaxy, is abraided or etched. Thus, the self-supporting wafer of an Mg-containing ZnO mixed single crystal can be obtained.

Description

technical field [0001] The present invention relates to a ZnO-based semiconductor material, in particular to a method for manufacturing ZnO single crystal useful in the field of optics and electric / electronic industry and a self-supporting ZnO single crystal wafer obtained therefrom. Furthermore, the present invention particularly relates to a self-supporting Mg-containing ZnO-based mixed single crystal wafer with high compositional uniformity useful in the fields of optics and electrical / electronic industries, and a method for producing a Mg-containing ZnO-based mixed single crystal therefor. Background technique [0002] Heretofore, Si, GaAs, GaN, etc. have been gradually used in optoelectronic devices having various functions. Recently, the development of light-emitting devices and electronic devices using GaN is in full swing. On the other hand, focusing on oxides, ZnO has been used in piezoresistors, gas sensors, sunscreens, etc., but recently due to its optical charac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B19/02C30B29/16C30B33/00H01L21/368
CPCC30B29/16H01L21/02554H01L21/02625H01L21/02628C30B9/08C30B19/02H01L21/0242H01L21/02573H01L21/02581H01L21/0237H01L21/02565
Inventor 关和秀幸小林纯宫本美幸大桥直树坂口勲和田芳树
Owner MITSUBISHI GAS CHEM CO INC
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