Four-junction solar photovoltaic cell chip for compound semiconductor

Abstract

The invention discloses a four-junction solar photovoltaic cell chip for a compound semiconductor and belongs to the technical field of semiconductor optic electronics. The key point is that: a top cell made of an AlInAs material with high forbidden bandwidth is arranged on the conventional multi-junction solar cell chip material system. The AlInAs material is used as the top cell to be attached to the conventional multi-junction solar cell chip material system, so the range of the absorption spectrum of the solar cell chip can be widened, the problem that the solar cell chip cannot fully absorb massive energy flow of solar radiation distributed at an ultraviolet band is effectively solved, and the photoelectric conversion efficiency of the multi-junction solar cell chip is improved.

Description

technical field [0001] The invention relates to a four-junction compound semiconductor solar photovoltaic cell chip structure, which belongs to the technical field of semiconductor optoelectronics. Background technique [0002] When non-renewable energy sources such as electricity, coal, and oil are in urgent need, and energy issues are increasingly becoming a bottleneck restricting the development of the international society and economy, solar energy has attracted special attention due to its inexhaustible, inexhaustible and zero-pollution characteristics. More and more countries have begun to implement the "Sunshine Plan" to develop solar energy resources and seek new impetus for economic development. In the long run, with the improvement of solar cell chip manufacturing technology and the invention of new photoelectric conversion devices, combined with the protection of the environment and the huge demand for renewable and clean energy in various countries, solar cell ch...

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Problems solved by technology

[0003] However, the relatively low photoelectric conversion efficiency of existing solar cell chips restricts its further wide application in practical work and life. This is because the solar radiation energy flow is asymmetrically distributed in the peak wavelength of about 500nm, from the ultraviolet 200nm band to In the wide spectral range of the far-infrared 2600nm band, especially in my country's Tibet, Xinjiang and other high-altitude or high-latitude regions, the energy flow of solar radiation is concentrated in the short-wavelength visible light and ultraviolet light bands.

At present, the bandgap width of the top cell chip in the multi-junction solar cell chip is limited to about 1.9ev, and the corresponding absorption wavelength is about 650nm. The large amount of energy contained in the ultraviolet band has not been effectively absorbed and utilized

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