Surface processing method of Auger electron spectrometer detecting sample

A technology of surface treatment and Auger electron, which is applied in the field of surface treatment of samples detected by Auger electron spectrometer, can solve the problems of platinum or silver signal weakening, covering, interference, etc., to reduce charging effect and avoid cost , improve the effect of signal-to-noise ratio

Inactive Publication Date: 2011-03-23
SEMICON MFG INT (SHANGHAI) CORP
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, aluminum foil and other conductive substances are used to wrap the Auger electron spectrometer detection sample. However, because the detection sample to be analyzed is very small, it is difficult to locate during the wrapping process, and it is difficult to ensure that the pad area to be analyzed is exposed. Therefore, this The success rate of the method is very low
[0006] The industry also adopts another method to reduce the charging effect, that is, to coat conductive glue such as silver glue or carbon glue on the surface of the detection sample, but this method also has a disadvantage, that is, these conductive glues are very easy to be polluted dur

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface processing method of Auger electron spectrometer detecting sample
  • Surface processing method of Auger electron spectrometer detecting sample
  • Surface processing method of Auger electron spectrometer detecting sample

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0027] The present invention will be described in more detail below with reference to the accompanying drawings, which show preferred embodiments of the present invention. It should be understood that those skilled in the art can modify the present invention described herein and still achieve the advantageous effects of the present invention. Therefore, the following description should be understood to be widely known to those skilled in the art, and not as a limitation to the present invention.

[0028] For the sake of clarity, not all features of actual embodiments are described. In the following description, well-known functions and structures are not described in detail, because they may confuse the present invention due to unnecessary details. It should be considered that in the development of any actual embodiment, a large number of implementation details must be made to achieve the developer's specific goal, such as changing from one embodiment to another in accordance wit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a surface processing method of an Auger electron spectrometer detecting sample, which comprises the following steps of providing the Auger electron spectrometer detecting sample; and utilizing rare gas ions to sputter the surface of the Auger electron spectrometer detecting sample. The method is simple and practical, has low cost, can rapidly and effectively reduce the charge effect and has no damage to the surface of the detecting sample requiring to be proximately analyzed so as to ensure obtaining the accurate proximate analysis result of the surface of the detecting sample and enhance the yield of the product.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a surface treatment method for a sample detected by an Auger electron spectrometer. Background technique [0002] In the field of integrated circuit manufacturing, bonding pads play a very important role in the internal structure of semiconductor devices as a connection between a semiconductor device and another semiconductor device or electronic component to form an electronic circuit module. , the pad must have good conductivity and high reliability. Generally, the bonding pad formation process of semiconductor devices includes the following steps: first, forming a conductive layer on the semiconductor substrate, wherein the material of the conductive layer can be one of aluminum or aluminum alloy or a combination thereof; then, etching the conductive layer layer to form a pad pattern; then, a passivation layer is formed on the conductive layer on which the pad ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01N23/227G01N1/28
Inventor 齐瑞娟
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products