Device for reducing polymers at back side of substrate

Abstract

The invention provides a device for reducing polymers at the back side of a substrate, which is arranged in a plasma etching chamber and comprises a focusing ring, a low-temperature ring and a heat radiation ring, wherein the focusing ring is arranged around the outer peripheral side of a base, and is provided with an extending part which extends under the edge of the back side of the substrate, the low-temperature ring is arranged under the back side of the substrate, and is positioned between the outer peripheral side and the extending part of the focusing ring, and the heat radiation ring is positioned under the low-temperature ring, is arranged around the outer peripheral side of the base, and is made of high-heat-conductivity electrical insulating material. The invention can fast conduct heat on the low-temperature ring through the low-temperature ring and the heat radiation ring, so that the temperature on the low-temperature ring is lower than the heat cracking temperature, andfinally, the polymers deposited and generated on the low-temperature ring in the etching process can be reduced.

Description

technical field [0001] The invention relates to the field of plasma processing devices, in particular to a device for reducing the backside temperature of a substrate by setting a low-temperature ring and a heat dissipation ring during the etching process of a substrate, thereby reducing the polymer on the backside of the substrate. Background technique [0002] During plasma etching of substrates, such as figure 1 As shown, the plasma etching chamber is provided with a base 1', a support on the surface of the base 1', the support is usually an electrostatic chuck 3' (ESC), and an electrostatic chuck 3' embedded The DC electrode 4' in. A substrate 2' to be etched is mounted on the electrostatic chuck 3'. The plasma chamber also includes an insulating ring 11' disposed around the outer peripheral side of the susceptor 1', the insulating ring may be made of quartz; a focus ring located on the insulating ring 11' and close to the substrate 2' 12', the focus ring 12' is arran...

AI Technical Summary

Problems solved by technology

Simultaneously because the middle ring 13' will be heated by the extension part of the focus ring 12' close to it, in each plasma processing process with different parameters, the temperature on the middle ring 13' will fluctuate up and down, although the middle ring 13' has already been connected with the close focus ring 12'. The ring 12' has thermal insulation, but there is still a small amount of heat that will be conducted from the focus ring to the middle ring 13', and the temperature of the middle ring will gradually rise as time accumulates, and finally even higher than the thermal cracking temperature, causing polymer deposition

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