Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing large-area high quality graphene on iron-based substrate

A graphene, elemental iron technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as unreported, achieve the effect of convenient operation and less defects

Inactive Publication Date: 2011-04-13
INST OF CHEM CHINESE ACAD OF SCI
View PDF2 Cites 32 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the method of preparing graphene with large area and high quality on iron has not been reported so far.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing large-area high quality graphene on iron-based substrate
  • Method for preparing large-area high quality graphene on iron-based substrate
  • Method for preparing large-area high quality graphene on iron-based substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1, prepare graphene on iron-based substrate

[0036] Step 1: Clean the iron foil sequentially with deionized water, ethanol, and acetone ultrasonically, then dry it in an oven, then put it into the quartz tube of the chemical vapor deposition system, align the center of the high-temperature furnace with the iron foil, and then repeatedly pump The vacuum completely removes the air in the furnace. Through 100sccmH 2 And 100sccmAr mixed gas as carrier gas, after ventilating for 60 minutes, start heating.

[0037] Step 2: When the temperature in the central area of ​​the furnace reaches 750°C, methane is introduced into the quartz tube as a carbon source, and the reaction begins.

[0038] The third step: stop feeding methane after the reaction is carried out for 10 minutes, close the high-temperature furnace at the same time, and continue feeding 100 sccmH 2 And the mixed gas of 100sccm Ar is down to room temperature to temperature, and the scanning electron mic...

Embodiment 2

[0040] Embodiment 2, prepare graphene on iron-based substrate

[0041] The preparation method is basically the same as in Example 1, except that the first step is to spin-coat PMMA on the surface of the iron foil used as a carbon source and then dry it in an oven. The temperature used for the synthesis of graphene in the second step is 900 ° C. There is no need to re-feed methane as a carbon source. Scanning electron microscopy of its products as image 3 As shown, a two-dimensional film-like structure with wrinkles, illustrated as graphene, can be observed from the figure.

Embodiment 3

[0042] Embodiment 3, prepare graphene on iron-based substrate

[0043] The preparation method is basically the same as in Example 1, and the difference is that the catalyst used is an iron block, and the temperature used for synthesizing graphene is 800 ° C, and the scanning electron microscope photo of its product is as follows: Figure 4 As shown, a two-dimensional film-like structure with wrinkles, illustrated as graphene, can be observed from the figure.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing graphene. In the method, chemical vapour deposition is adopted. The method comprises the following two ways according to different carbon sources adopted in the preparation process: 1) iron catalyst is placed into an oxygen-free reactor, the temperature of the catalyst is increased to 750-1000 DEG C, then a gas carbon source is introduced into the reactor, and reaction is carried out, thus obtaining graphene; and 2) a solid carbon source is coated onto the surface of the iron catalyst or is placed on the iron catalyst and then is placed into the oxygen-free reactor, and reaction is carried out at the temperature of 750-1000 DEG C, thus obtaining graphene, wherein the iron catalyst can be a simple substance iron, iron alloy or iron compound. The method for preparing large-area high quality graphene on iron by utilizing chemical vapour deposition is easy to operate, is easy and feasible, and can be used for mass production; and the graphene prepared by the method has less defects compared with the graphene prepared by graphite oxidation.

Description

technical field [0001] The invention relates to a method for preparing large-area high-quality graphene on an iron-based substrate. Background technique [0002] Since Andre Geim and Konstantin Novoselov of the University of Manchester successfully exfoliated graphene by tape method in 2004, its superior mechanical and electrical properties have attracted the attention of many scientists. The ideal graphene structure is a planar hexagonal lattice, which can be regarded as a layer of exfoliated graphite molecules, and each carbon atom is sp 2 Hybridization, and contribute electrons on the remaining one p orbital to form a large π bond, π electrons can move freely, endowing graphene with good electrical conductivity. Graphene is a new carbonaceous material with a two-dimensional honeycomb lattice structure formed by densely packed carbon atoms, with a thickness of one or a few atomic layers, which is only one-two-thousandth of that of hair. At the same time, it is also the b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/26
Inventor 刘云圻薛运周武斌黄丽平郭云龙陈建毅刘洪涛耿德超于贵
Owner INST OF CHEM CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products