Susceptor structure and processing apparatus

Abstract

The present invention provides a susceptor structure and a processing apparatus, which can prevent larger thermal stress on the susceptor and can prevent damage of the susceptor body. The susceptor structure is provided in a processing container for carrying the processed member to be processed. The susceptor structure comprises the following components: the susceptor which is formed by dielectric for carrying the processed member and is provided with a heating mechansim that heats the processed member; a plurality of protecting pillar tubes which are set to vertical at the base side of a processing container and respectively have an upper end that is jointed with a lower surface of the susceptor and an open lower end; and heater electrifying tubes which are inserted into the protecting pillar tubes and have upper ends that are connected with the heating mechanism; purge gas circulation hermetic chambers which are provided at the base side of the processing container and are communicated with the inner part of the protecting pillar tubes; and an inert gas supply mechanism which supplies inert gas to the purge gas circulation hermetic chambers. Therefore, larger thermal stress on the susceptor can be prevented for preventing breakage of the susceptor body.

Description

technical field [0001] The present invention relates to a processing device and a mounting table structure for a target object such as a semiconductor wafer. Background technique [0002] Generally, in the manufacture of semiconductor integrated circuits, various single-wafer processes such as film formation, etching, heat treatment, modification, and crystallization are repeatedly performed on a target object such as a semiconductor wafer to form a desired integrated circuit. When performing the above-mentioned various treatments, the necessary processing gas is introduced into the processing container corresponding to the type of the processing, for example, film-forming gas or halogen gas is introduced in the case of film-forming processing, and Introduction of ozone gas, introduction of N in the case of crystallization treatment 2 Inert gas such as gas or O 2 gas etc. [0003] As an example of a single-wafer type processing apparatus that heat-treats semiconductor waf...

AI Technical Summary

Problems solved by technology

[0013] However, in this case, the purge gas supplied to the column 4 inevitably leaks to the processing space side in the processing container through the minute gap, and as a result, there is a problem that not only the Ability to perform processing under high vacuum due to high purge gas consumption and high running costs

Images