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Method for preparing graphene film with single atomic layer

A technology of monoatomic layer graphite and atomic layer deposition, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of uniform graphene material, poor quality of graphene, graphite layer damage, etc., to achieve The effect of complete structure, uniform thickness and excellent performance

Active Publication Date: 2011-05-11
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The oxidant used in the graphite oxide reduction method has a damaging effect on the graphite layer, and the resulting graphene is of poor quality and has many defects.
There is also a defect in the above various methods, that is, the graphene material with uniform thickness and single atomic layer thickness cannot be obtained.

Method used

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  • Method for preparing graphene film with single atomic layer
  • Method for preparing graphene film with single atomic layer
  • Method for preparing graphene film with single atomic layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A kind of preparation method of monoatomic layer graphene film, comprises the steps:

[0031] Step 101, under the plasma condition of 200°C, hydrogen gas is introduced for 5 minutes, and the (0001) crystal plane and the silicon carbide substrate terminated by carbon atoms are hydrogenated to form a C-H bond on the surface of the silicon carbide substrate, such as figure 1 As shown in figure a in the middle; the silicon carbide substrate after hydrogenation treatment is placed in the reaction chamber of the atomic layer deposition equipment;

[0032] Step 102, injecting argon gas with a concentration of 99.99% into the reaction chamber of the atomic layer deposition equipment for 5 minutes to clean the reaction chamber; Light irradiation decomposes diazomethane, and the decomposition products have unbonded electrons. The chemical expression of diazomethane decomposition is:

[0033] Such as figure 1 As shown in Figure b;

[0034] The decomposition product carbene (:...

Embodiment 2

[0038] A kind of preparation method of monoatomic layer graphene film, comprises the steps:

[0039] Step 101, under the plasma condition of 300°C, hydrogen gas is introduced for 10 minutes, and the silicon carbide substrate with the (0001) crystal plane terminated by carbon atoms is subjected to hydrogenation treatment, so that the surface of the silicon carbide substrate forms a C-H bond, such as figure 1 As shown in figure a in the middle; the silicon carbide substrate after hydrogenation treatment is placed in the reaction chamber of the atomic layer deposition equipment;

[0040] Step 102, injecting argon gas with a concentration of 99.99% into the reaction chamber of the atomic layer deposition equipment for 10 minutes to clean the reaction chamber; Light irradiation decomposes diazomethane, and the decomposition products have unbonded electrons. The chemical expression of diazomethane decomposition is:

[0041] Such as figure 1 As shown in Figure b;

[0042] The de...

Embodiment 3

[0046] A kind of preparation method of monoatomic layer graphene film, comprises the steps:

[0047] Step 101, under the plasma condition of 400°C, hydrogen gas is introduced for 15 minutes, and the silicon carbide substrate with the (0001) crystal plane terminated by carbon atoms is subjected to hydrogenation treatment, so that the surface of the silicon carbide substrate forms a C-H bond, such as figure 1 As shown in figure a in the middle; the silicon carbide substrate after hydrogenation treatment is placed in the reaction chamber of the atomic layer deposition equipment;

[0048] Step 102, injecting argon gas with a concentration of 99.99% into the reaction chamber of the atomic layer deposition equipment for 15 minutes to clean the reaction chamber; Light irradiation decomposes diazomethane, and the decomposition products have unbonded electrons. The chemical expression of diazomethane decomposition is:

[0049] Such as figure 1 As shown in Figure b;

[0050] The de...

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Abstract

The invention relates to the technology of the preparation of graphene, in particular to a method for preparing a graphene film with a single atomic layer. The method comprises the following steps of: placing a silicon carbide substrate in a reaction chamber of atomic layer deposition equipment; introducing diazomethane into the reaction chamber of the atomic layer deposition equipment; performing chemical adsorption on the surface of the silicon carbide substrate by using the diazomethane; performing a halogenation reaction on the diazomethane and introduced gaseous iodine to form an instable carbon-iodine bond; and breaking the carbon-iodine bond by lighting to form the graphene film with the single atomic layer on the surface of the silicon carbide substrate. In the method, the graphene film with the single atomic layer is prepared by utilizing atomic layer deposition technology; and the preparation method contributes more to the deposition of carbon atoms and the growth of the graphene, namely the prepared graphene film has more uniform thickness, more complete structure and higher performance.

Description

technical field [0001] The invention relates to a preparation technology of graphene, in particular to a preparation method of a monoatomic layer graphene film. Background technique [0002] Since scientists successfully peeled off graphene, graphene immediately attracted widespread attention, because graphene has good mechanical, thermal and electrical properties. In terms of mechanics: the connection between the carbon atoms in graphene is very flexible. When an external mechanical force is applied, the surface of the carbon atom will bend and deform, so that the carbon atoms do not need to be rearranged to adapt to the external force, and the stability of the structure is maintained; Thermal aspects: The emergence of graphene has broken the theory and experimental circles that the perfect two-dimensional structure cannot exist stably at non-absolute zero, which is due to the microscopic distortion of graphene at the nanometer level; in terms of electricity: stable lattice...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/48
Inventor 夏洋饶志鹏刘键
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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