Method for detecting pinhole type growth defect

Abstract

The invention provides a method for detecting a pinhole type growth defect. The method comprises the following steps of: growing a silicon dioxide gate oxide layer on a semiconductor silicon substrate; corroding the gate oxide layer by using mixed solution of nitric acid, hydrofluoric acid and water; forming a hole on the semiconductor silicon substrate below the pinhole type growth defect of the gate oxide layer; flushing the surface of the gate oxide layer by using deionized water, then detecting the hole through an optical microscope and determining the position of the pinhole type growth defect of the gate oxide layer; and finally preparing a sample at the position of the pinhole type growth defect and accurately detecting the position of the pinhole type growth defect. By the method, the pinhole type growth defect of the gate oxide layer can be detected in real time, the sample can be quickly and accurately prepared at the position of the pinhole type growth defect, and the position of the pinhole type growth defect can be precisely detected by a transmission electron microscope.

Description

technical field [0001] The invention relates to a detection method for semiconductor pinhole growth defects, in particular to a detection method for pinhole growth defects. Background technique [0002] The Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) device structure includes an active region in the semiconductor silicon substrate, a gate (Gate poly) above the active region, and active gates on both sides of the gate. The regions are the source and drain formed by ion implantation, the conductive channel under the gate, and the gate oxide layer (GateOxide) between the gate and the conductive channel. In the manufacturing process of MOSFET, the gate oxide layer and the gate are first grown on the semiconductor silicon substrate, and then other structures of the MOSFET device are grown. Among them, the pinhole growth defects of Gate Oxide will directly lead to the failure of Gate Oxide performance test. In the manufacturing process of a semiconductor device, in...

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Problems solved by technology

[0005] However, due to the method of electrical testing, a large current will be generated at the defect, and the heat released by the thermal effect of the current will destroy or even burn the original appearance of the defect. Therefore, TEM can only see the gate at the defect, and the gate oxide layer The phenomenon of fusion with the active area and the observation of the defect morphology whose original appearance is destroyed are not helpful for judging whether there are pinhole growth defects in Gate Oxide itself and the analysis of the cause of the defects.

Moreover, the subsequent manufacturing process will also affect the performance of Gate Oxide, so it is impossible to determine whether the electrical test defects are pinhole growth defects of Gate Oxide itself.

In addition, it is also a great waste of production cost to find Gate Oxide failure through the electrical test at the WAT stage

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