Silica-based photoelectric foreign substance integrating method and silica-based photoelectric foreign substance integrating chip

Abstract

The invention discloses a silica-based photoelectric foreign substance integrating method and a silica-based photoelectric foreign substance integrating chip, which pertain to the technical field of photoelectric foreign substance integration. The silica-based photoelectric foreign substance integrating method comprises the steps of: arranging a silica-based passive photonic device on a silicon chip to be used as an optical information transmission channel; arranging a CMOS (Complementary Metal Oxide Semicondutor) microelectronic integrated circuit in an III-V group chip; realizing an active area multi-layer quantum well structure of an active photonic device and the CMOS microelectronic integrated circuit on the III-V group chip through one-step extension; bonding an III-V group chip on the silicon chip by adopting a whole chip bonding process; and arranging an optical coupler in the III-V group chip. According to the silica-based photoelectric foreign substance integrating method, the micro-electronic circuit and the active photonic device are integrated in the same III-V group material layer, and enables the development and the application of the silica-based photoelectric foreign substance integrated chip are feasible; and the silica-based photoelectric foreign substance integrating method can be widely applied for development of next-generation high-density, large-capacity and multifunctional single integrated photoelectric chip.

Description

technical field [0001] The invention relates to the technical field of novel photoelectric heterogeneous integration based on silicon and III-V semiconductor materials, in particular to a silicon-based photoelectric heterogeneous integration method and a silicon-based photoelectric heterogeneous integrated chip. Background technique [0002] In recent decades, with the development of electronic circuit integration technology and the improvement of micro-processing technology, the size of electronic devices and the number of integrated basic components have been increasing. In particular, the adoption of standard silicon wafers and standard thin-film technology represented by CMOS has greatly accelerated the rapid and highly integrated development of information processing devices. With the rapid increase of information processing speed, the amount of information exchanged between devices has increased sharply. Due to the influence of parasitic resistance, capacitance, and in...

AI Technical Summary

Problems solved by technology

There are the following difficulties: First, the unit module bonding technology has low integration efficiency and poor bonding strength, making it difficult to be suitable for large-scale, high-density commercial integration; second, compared with III-V materials, the carrier mobility of silicon materials is not High, which restricts its application in the production of high-frequency, low-power CMOS electronic circuits

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