Manufacturing method for substrate for mask blank, mask blank, photo mask, and semiconductor device
A manufacturing method and mask technology, which are used in the manufacture of semiconductor/solid-state devices, originals for photomechanical processing, and photoengraving of patterned surfaces, can solve problems such as deterioration of flatness and deformation of photomasks, and achieve Yield improvement effect
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Embodiment 1
[0077] For glass substrates (approximately 152mm x 152mm x 6.45mm) on which synthetic quartz glass substrates were ground and chamfered, a predetermined number of them were placed on a double-sided grinding machine, and rough grinding was performed under the following grinding conditions. After the rough grinding step, ultrasonic cleaning is performed on the glass substrate in order to remove abrasive grains adhering to the glass substrate. In addition, grinding conditions such as processing pressure, each rotation speed of the upper and lower plates, and grinding time are appropriately adjusted.
[0078] Grinding liquid: cerium oxide (average particle size 2μm~3μm) + water
[0079] Grinding pad (pad): Hard grinding disc (polisher) (polyurethane pad)
[0080] Next, a predetermined number of rough-polished glass substrates were placed on a double-side polishing device, and a fine-polishing process was performed under the following polishing conditions. After the precision pol...
Embodiment 2
[0093] In the same manner as in Example 1, the steps from ST11 to ST17 were performed, and 98 glass substrates were selected. Next, main surface shape correction in the slit direction (second direction) is performed ( ST18 ). right Figure 6 The glass substrate with the shape of the main surface after clamping shown in (b), such as Figure 8 As shown in (a), each straight line Y of the upper end, center, and lower end parallel to the direction of the slit in the correction area X of the main surface shape after clamping of the mask board substrate 2 Calculate the cross-sectional shape of the substrate in the direction of the slit, and calculate the quadratic curve by the least square method for the three cross-sectional shapes, and calculate Figure 8 Approximate curve (second approximate curve) Z in the direction of the slit shown in (b) 2 . Then, according to the approximate curve Z 2 work out Figure 8 The approximate curved surface shown in (c) is subtracted from the ...
Embodiment 3
[0099] In the same manner as in Example 1, the steps from ST11 to ST17 were performed, and 98 glass substrates were selected. Next, main surface shape correction is performed from both the scanning direction (first direction) and the slit direction (second direction) ( ST18 ). right Figure 6 The glass substrate with the shape of the main surface after clamping shown in (b), such as Figure 7 As shown in (a), straight lines Y at the right end, center, and left end of the correction area X parallel to the scanning direction according to the main surface shape of the substrate for the mask after clamping 1 Calculate the cross-sectional shape of the substrate in the scanning direction from the height information of Figure 7 Approximate curve (first approximate curve) Z in the scanning direction shown in (b) 1 . and, if Figure 8 As shown in (a), each straight line Y of the upper end, center, and lower end parallel to the direction of the slit in the correction area X of the ...
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Abstract
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