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Method for forming metal interconnection

A metal interconnection and metal layer technology, which is applied in the manufacturing of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve the problems of aluminum metal surface corrosion, difficult to remove, etc., to avoid disconnection and ensure electrical performance. Effect

Inactive Publication Date: 2011-07-27
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the chlorine bound to the polymer on the aluminum surface is difficult to remove by the above method
Although the chlorine polymer can be removed by wet cleaning the wafer after the photoresist stripping process, the aluminum metal surface is already corroded before the chlorine polymer is removed by the wet cleaning

Method used

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  • Method for forming metal interconnection
  • Method for forming metal interconnection
  • Method for forming metal interconnection

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Embodiment Construction

[0022] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0023] In order to thoroughly understand the present invention, detailed steps will be proposed in the following descriptions, so as to illustrate how the present invention solves the metal problem by setting the irradiation lamp in the condensation chamber and feeding the oxidizing gas under the condition of not increasing the process time. corrosion problem. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail bel...

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Abstract

The invention provides a method for forming metal interconnection, which comprises the steps as follows: an interlayer dielectric layer, a first barrier layer, a metal layer, and a second barrier layer are formed on a front end device in sequence; the second barrier layer, the metal layer, and the first barrier layer are etched so as to expose the side wall of the metal layer; condensing treatment and optical irradiation treatment are implemented on the metal layer; moreover, oxidative gases are pumped into the metal layer so as to form a passivation layer on the side wall. The method can effectively solve the corrosion problem of a metal interconnection structure caused by chlorine introduced when aluminum is etched, and avoids wire breaking caused by the corrosion; therefore, the electrical performances of metal interconnection are guaranteed.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, and more particularly to a method for preventing corrosion of a metal interconnection structure. Background technique [0002] In the integrated circuit (Integrated-Circuit, IC) manufacturing technology, after the main body of the device is completed, according to the circuit layout design, the wiring made of metal film or polysilicon is used to transmit electrical signals to different parts of the chip. Thin films of metal or polysilicon are called interconnects. Through the interconnection structure, different parts in the device or various devices are properly connected. Interconnects can also be used as common metal connections between on-chip devices and overall packages. Aluminum is the most widely used interconnection metal in integrated circuits. It has been used for nearly 30 years. Because aluminum has many advantages, so far, most integrated circuits still use aluminum as the ...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L23/532
Inventor 南基旭
Owner SEMICON MFG INT (SHANGHAI) CORP