SiGe matrix nanocomposite materials with an improved thermoelectric figure of merit
A nanocomposite material and matrix technology, applied in the field of nanocomposite materials, can solve problems such as insufficient efficiency
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[0074] Experimental part
[0075] The process is divided into two consecutive steps providing the SiGe layer and the MoSi silicide dotting on its surface. Then, these two consecutive steps were repeated several times, thereby forming a SiGe nanocomposite with MoSi inclusions.
[0076] First consecutive steps:
[0077] The SiGe nanocomposite layer was grown by reduced pressure chemical vapor deposition (RP-CVD). This precipitation technique has been used in the literature to realize superlattices (Venkatasubramanian, R. et al., Nature, Vol 413, 11 Oct. 2001 pp.597-602; A. Shakouri, Proceedings of IEEE, 94, 1613 (2006) ; Kim, W. et al., Phys. Rev. Lett. 96, 045901 (2006)). CVD provides high quality layers and enables the application of in situ doping. The growth pressure is typically 10 Torr. h 2 The gas flow of the carrier gas is set at a fixed value between approximately 10 and 15 standard liters per minute. Pure silane (SiH 4 ) was used as the source of Si, and in H 2 ...
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