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Photolithographic mask and preparation method thereof

A photolithography mask and photolithography technology, applied in the field of mask plates, can solve problems such as limitations

Inactive Publication Date: 2011-08-31
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these technologies have great limitations on the materials and substrates to be processed, usually flexible, polymer or organic substrates, etc., which to a certain extent limit the application of these technologies in traditional micromachining, especially for traditional micromachining materials. Application in processing

Method used

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  • Photolithographic mask and preparation method thereof
  • Photolithographic mask and preparation method thereof

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Embodiment Construction

[0022] The present invention will be further described below in combination with specific embodiments and accompanying drawings.

[0023] Raw material: double-sided polished N-type silicon wafer 10, resistivity 2-4Ωcm crystal orientation , silicon wafer thickness 400 μm.

[0024] figure 1 Shown is the process flow of stencil making in stencil lithography, including the following steps:

[0025] 1. Use plasma-enhanced chemical vapor deposition (PECVD) equipment in the standard semiconductor process to grow SiC thin films 21 and 22 on both sides of the silicon substrate 10, such as figure 1 as shown in (a);

[0026] Among them, the conditions for PECVD deposition of SiC film are: pressure 700-1200mTorr, temperature 200-400°C, SiH 4 : 20~60sccm, CH 4 : 200~400sccm, Ar: 200~400sccm, HF (13.56MHz): 10~20s, LF (380kHz): 20~30s, power 200~400W. The formed SiC thin film has a thickness of 0.5 μm.

[0027] 2. Photolithography on one side (front side) of the silicon wafer, ICP etc...

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Abstract

The utility model provides a photolithographic mask and preparation method thereof. The photolithographic mask comprises a substrate; a SiC film grown through a plasma reinforced chemical vapor deposition method is adhered on one side of the substrate; a photolithographic mask pattern is arranged on the SiC film; and the part of the substrate arranged below the photolithographic mask pattern is removed to lead the area of the photolithographic mask pattern to be suspended. The strain of the photolithographic mask is 0-100Mpa; moreover, the photolithographic mask has very good corrosion resistance. The photolithographic mask is applied to a mask photoetching technology to replace a traditional photoresist photoetching technique.

Description

technical field [0001] The invention relates to a mask plate made of PECVD SiC, which is directly used to replace traditional photoresist photolithography technology, and belongs to the field of micro-nano electronics. Background technique [0002] Since the 1960s, in addition to being used for integrated circuits, micro-nano technology has also been applied to various micro-mechanical processing. In the past 20 to 30 years, micro-electromechanical systems (MEMS) have developed vigorously, and a large number of micro-processed sensors and actuators have emerged. As these micromechanical devices are more used in various physical environments, such as aerospace, defense missiles, biomedicine, etc., the demand for materials for devices is getting higher and higher, including titanium (Aimi MF, Rao MP, Macdonald NC , et al, NATURE MATERIALS Vol.3 Iss.2: 103-105, FEB 2004), Parylene (Liu C, ADVANCEDMATERIALS Vol.19 Iss.22: 3783-3790, Published: NOV 19 2007), Polyimide (Ma H, Je...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14
Inventor 唐伟孟博张海霞
Owner PEKING UNIV