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An OLED device and a manufacturing method thereof

A device and light-emitting layer technology, which is applied in the field of organic light-emitting diode devices, can solve the problems that the efficiency, color purity and color stability of red light OLED phosphorescent devices cannot be achieved simultaneously, and achieve the promotion of carrier balance, inhibition of exciton diffusion, The effect of improving the quality

Inactive Publication Date: 2011-08-31
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Description
  • Claims
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Problems solved by technology

[0004] In order to solve the problem that the efficiency, color purity and color stability of red OLED phosphorescent devices in the prior art cannot be achieved at the same time, the purpose of the present invention is to provide a novel OLED device and its manufacturing method, in order to obtain high efficiency, red saturation and Organic Light-Emitting Devices with Stable Color with Voltage

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  • An OLED device and a manufacturing method thereof
  • An OLED device and a manufacturing method thereof
  • An OLED device and a manufacturing method thereof

Examples

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preparation example Construction

[0029] From the point of view of the preparation method of a kind of OLED device of the present invention: at first need prepare transparent conductive film 2 on substrate 1, etch OLED desired shape and clean; Then just can be in high vacuum (about 5 * 10 -4 Pa) for the preparation of multilayer structures. The preparation process is simple to see:

[0030]First, on the transparent conductive film 2, use a multi-source high-vacuum thermal deposition system to sequentially deposit the hole transport layer NPB on the cleaned and etched ITO surface, deposit a TAPC layer on the NPB layer, and use a double-source co-evaporation method on the TAPC layer. The method is to deposit TAPC:Ir-complexes, then sequentially double-source co-evaporation deposition of CBP:Ir-complexes and BCP:Ir-complexes, and then deposit a hole / exciton blocking layer on the light-emitting layer. Deposit a 3TPYMB or B3PyPPM layer on the barrier layer, then deposit a thin layer of LiF, and then deposit metal ...

Embodiment 1

[0039] The substrate 1 is glass, and the transparent electrode 2 is an anode ITO film of 20 ohm / port. -4 Pa), deposit a hole transport layer 3 on the transparent electrode 2, that is, NPB with a thickness of 20nm, and then deposit a hole transport layer 4 on the hole transport layer 3, that is, a thickness of 5nm (thickness can be selected from 10nm, 15nm or 20nm, etc.) of TAPc; then deposit a light-emitting layer 6 on the hole-transport layer 4, and the light-emitting layer 6 evaporates CBP and Ir-complexes simultaneously by co-deposition, and the mass ratio of CBP and Ir-complexes is 100:X , where X is 5, 7, 9, 11, with different doping concentrations Ir-complex luminescent layer 6 with a thickness of 25nm; a hole-exciton blocking layer 8 is deposited on the luminescent layer 6, and the hole-exciton blocking The material of layer 8 is BCP, and the thickness is 20nm, 25nm or 30nm, etc.; after that, the electron injection layer 10 is deposited on the hole-exciton blocking laye...

Embodiment 2

[0042] On the basis of Example 1, improve the light-emitting layer, increase the first doped light-emitting layer 5 of 8nm and the third doped light-emitting layer 7 of 8nm, the thickness of the second doped layer becomes 14nm, and the Ir-complex percentage of the doped layer Content is all 7%, and other preparation conditions are all identical with embodiment 1.

[0043] The test results of the packaged finished device show that the current density of the device with the addition of the first doped light-emitting layer and the third doped light-emitting layer is slightly reduced under the same voltage drive, the brightness is significantly increased, and the highest current efficiency reaches 13.7cd / A , the color purity CIE is (0.663, 0.334), and the maximum brightness of the device at 12V is 21860cd / m 2 .

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Abstract

The invention discloses a novel red phosphorescent iridium compound with high luminous efficiency and saturation and an OLED device based on doping of the compound. The OLED device is of multilayer structure, which, from an underlayer, successively consists of a transparent conducting film, a cavity transport layer, a light-emitting layer, a cavity-exciton barrier layer, an electron injecting layer and a cathode, wherein the light-emitting layer is of composite structure formed by stack-up of successive three layers of different host materials doped with red light iridium complex. Mass concentrations of the red light iridium complex doped in the host material layers of the light-emitting layer are identical or are deviated from each other, with the total mass concentration of the doping between 5% and 10%. The device commendably restrains the exciton to emit light in the light-emitting layer, thereby improving efficiency and color stability of the red organic light-emitting device. The red organic light-emitting device in the invention can be applied to a red light unit and a red light component of white light of high-performance color rendering devices.

Description

technical field [0001] The invention relates to an OLED device used for OLED display or white light illumination, in particular to a high-efficiency, saturated, color-stable red light organic light-emitting device and a preparation method thereof, belonging to the technical field of organic light-emitting diode (OLED) devices. Background technique [0002] High-quality display and white lighting require saturated, high-efficiency and stable red, green and blue primary colors. In OLED lighting technology, phosphorescent organic light-emitting diodes can use triplet excitons, and the quantum efficiency of the device can reach up to 100%. . However, the development of three-color phosphorescence is not balanced at present. Some red phosphorescent devices with saturated colors have low luminous efficiency, while some high-efficiency red phosphorescent devices have poor color purity, which cannot meet the needs of high-quality display and white lighting. [0003] On the other ha...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/52H01L51/54H01L51/56C09K11/06
CPCY02B20/181Y02B20/00
Inventor 苏文明崔铮张东煜林文晶
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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