Thin-film transistor and manufacturing method thereof

Abstract

The invention relates to a thin-film transistor and a manufacturing method thereof, wherein the manufacturing method of the thin-film transistor comprises the following steps: forming a gate electrode on a base plate; forming a gate insulating layer on the base plate so as to cover the gate electrode; forming an oxide semiconductor layer on the gate insulating layer above the gate electrode; forming an etch blocking layer on the oxide semiconductor layer; forming a source electrode and a drain electrode on two sides of the etch blocking layer, wherein the source electrode and the drain electrode are electrically insulated from each other, and are exposed out of part of the oxide semiconductor layer at two sides of the etch blocking layer; and forming a protecting layer to cover the sourceelectrode and the drain electrode, leading the oxide semiconductor layer exposed by the source electrode and the drain electrode to form two ohm contact layers during the process of forming the protecting layer, wherein the ohm contact layers are respectively electrically connected with the source electrode and the drain electrode. The manufacturing method of the thin-film transistor can be used for simplifying the manufacturing process of the thin-film transistor and lowering the manufacturing cost; and the thin-film transistor is simple to manufacture and low in manufacturing cost.

Description

technical field [0001] The present invention relates to a thin film transistor and its manufacturing method, and in particular to a thin film transistor with an oxide semiconductor layer and its manufacturing method. Background technique [0002] Recently, the awareness of environmental protection has risen, and liquid crystal display panels (Liquid crystal display panels) with superior characteristics such as low power consumption, good space utilization efficiency, no radiation, and high image quality have become the mainstream of the market. [0003] In the past, most liquid crystal display panels use amorphous silicon (a-Si) thin film transistors or low-temperature polysilicon (LTPS) thin film transistors as switching components for each pixel structure. However, in recent years, studies have pointed out that: compared with amorphous silicon thin film transistors, oxide semiconductor thin film transistors have higher carrier mobility (mobility); and, compared with low te...

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Problems solved by technology

However, the manufacturing process of the above-mentioned oxide semiconductor thin film transistor is complicated and the manufacturing cost is high

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