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Manufacturing method of surface texture of P-type oversized-crystalline-grain polycrystalline silicon solar battery

A technology of solar cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of obvious difference in reflectivity, affecting the appearance of components, poor appearance uniformity, etc., to reduce reflectivity, avoid lint The effect of uneven surface and reduced color difference

Active Publication Date: 2014-04-16
RENESOLA JIANGSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For large-grain polycrystalline silicon wafers, the reflectivity of silicon wafers after conventional isotropic etching does not decrease much, which directly affects the improvement of conversion efficiency; using anisotropic etching method, the morphology difference after texturing is large, and the reflection The rate difference is obvious, the color difference is also very obvious, and the appearance uniformity is poor, which affects the appearance of the manufactured components

Method used

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  • Manufacturing method of surface texture of P-type oversized-crystalline-grain polycrystalline silicon solar battery
  • Manufacturing method of surface texture of P-type oversized-crystalline-grain polycrystalline silicon solar battery
  • Manufacturing method of surface texture of P-type oversized-crystalline-grain polycrystalline silicon solar battery

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Experimental program
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Effect test

Embodiment 1

[0021] First clean the ultra-large-grain polycrystalline silicon wafer and put it into a uniformly mixed anisotropic etching solution (the mass fraction of tetramethylammonium hydroxide is 20%, the molar ratio of tetramethylammonium hydroxide to KOH is 2, and the additive dinuclear phthalate The content of cyanine sulfonate is 5g / L) The reaction temperature is 80°C, the reaction time is 5min, then blow dry, the corrosion thickness is 7μm, and then the large-grain polycrystalline silicon wafer is cleaned and put into a uniformly mixed isotropic etching solution (NaNO 2 The content of HF is 2mol / L, the content of HF is 20mol / L), the reaction temperature is 20°C, after 5 minutes of reaction, it is blown dry, the total corroded thickness of the silicon wafer is 10μm, and the reflectance is tested.

Embodiment 2

[0023] First clean the large-grain polycrystalline silicon wafer and put it into a uniformly mixed anisotropic etching solution (the mass fraction of tetramethylammonium hydroxide is 25%, the molar ratio of tetramethylammonium hydroxide to KOH is 2, and the additive dinuclear phthalein The content of cyanine sulfonate is 5g / L), the reaction temperature is 80°C, the reaction time is 7min, then blow dry, and the corrosion thickness is 9μm. 2 The content of HF is 2.5mol / L, the content of HF is 20mol / L), the reaction temperature is 20°C, the reaction time is 5 minutes and then blow dry.

Embodiment 3

[0025] First clean the large-grain polycrystalline silicon wafer and put it into a uniformly mixed anisotropic etching solution (the mass fraction of tetramethylammonium hydroxide is 25%, the molar ratio of tetramethylammonium hydroxide to KOH is 2, and the additive dinuclear phthalein The content of cyanine sulfonate is 5g / L), the reaction temperature is 80℃, the reaction time is 8 minutes, and the etching thickness is 10μm. 2 The content of HF is 2.7mol / L, the content of HF is 20mol / L), the reaction temperature is 20°C, the reaction time is 5min, and then blow dry.

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Abstract

The invention discloses a manufacturing method of surface texture of a P-type oversized-crystalline-grain polycrystalline silicon solar battery. The method comprises the following steps of: (a) cleaning oversized-crystalline-grain polycrystalline silicon, drying, putting the dried oversized-crystalline-grain polycrystalline silicon into anisotropic corrosive liquid for corrosion by adopting an anisotropic corrosion method, wherein the corrosion depth of a silicon wafer after anisotropic corrosion is 3-10mu m; (b) for a small-crystalline-grain of the silicon wafer, putting the silicon wafer into isotropic corrosive liquid for corrosion by adopting an isotropic corrosion method, wherein the total corrosion depth of the silicon wafer after isotropic corrosion is 5-15mu m. By the manufacturing method of the surface texture disclosed by the invention, not only is the reflectivity of the silicon wafer reduced, but also the problems of nonuniform velvet and obvious color difference of the large-crystalline-grain polycrystalline silicon are avoided. The color difference between an oversized-crystalline-grain part and a small-crystalline-grain part at the edge is reduced, and the reflectivities of the two parts are close; and both close tothe reflectivitiy after monocrystalline velvet making, and the light absorbing effect is good.

Description

technical field [0001] The invention relates to the technical field of manufacturing crystalline silicon solar cells, in particular to the technology for preparing the surface texture of super-large-grain polycrystalline silicon solar cells. Background technique [0002] Since the advent of solar cells, people have mainly explored ways to improve photoelectric conversion efficiency and reduce costs from different perspectives such as developing new battery materials, designing new battery structures, and improving existing manufacturing processes. Effectively reducing the reflection loss of sunlight on the surface of silicon wafers is an important method to improve the conversion efficiency of solar cells. In the process of solar cell manufacturing, surface texture directly affects the reflection ability of silicon wafers to sunlight. [0003] For the surface texture method of single crystal silicon wafer, it is mainly based on the anisotropic corrosion characteristics of th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 袁红霞王立建李潘剑
Owner RENESOLA JIANGSU LTD