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Mechanical texturing method of monocrystalline wafer for solar cell

A technology for solar cells and monocrystalline silicon wafers, which is applied in the manufacture of circuits, electrical components, and final products. It can solve the problems of being unable to put into actual mass production, complex processes, and high prices, and is suitable for large-scale mass production and simple equipment. , low cost effect

Inactive Publication Date: 2011-09-21
JIANGSU AIDE SOLAR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of the equipment used in these schemes are expensive and complicated, and cannot be put into actual mass production

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Place the silicon wafer on the conveyor belt of the vacuum sandblasting machine, and set the conveyor belt speed to 8mm / s;

[0023] (2) The conveyor belt sends the silicon wafer to the vacuum blasting room, the blasting pressure of the nozzle main pipe is 0.55MPa, the nozzle pressure is 0.07MPa, and the number of nozzles is 10;

[0024] (3) The air source pressure is set to 0.4MPa;

[0025] (4) The silicon wafer passes through the sandblasting chamber at a speed of 8mm / s, and the surface of the silicon wafer is formed into a suede surface by polishing the silicon carbide sand in the sandblasting chamber;

[0026] (5) The conveyor belt transports the silicon wafer out of the sandblasting room, and the texturing is completed.

[0027] The pyramid size of monocrystalline silicon wafers prepared by this process is 2 μm, the conversion efficiency of monocrystalline silicon cells is 17.5%, and the light-induced attenuation is 0.6%.

Embodiment 2

[0029] (1) Place the silicon wafer on the conveyor belt of the vacuum blasting machine, and set the conveyor belt speed to 15mm / s;

[0030] (2) The conveyor belt sends the silicon wafer to the vacuum blasting room, adjust the blasting pressure of the nozzle main pipe to 0.85MPa, and the nozzle pressure to 0.12MPa, of which the number of nozzles is 20;

[0031] (3) The air source pressure is set to 0.6 MPa;

[0032] (4) The silicon wafer passes through the sandblasting chamber at a speed of 15mm / s, and the surface of the silicon wafer is formed into a suede surface by polishing the silicon carbide sand in the sandblasting chamber;

[0033] (5) The conveyor belt transports the silicon wafer out of the sandblasting room, and the texturing is completed.

[0034] The pyramid size of monocrystalline silicon wafers prepared by this process is 4 μm, the conversion efficiency of monocrystalline silicon cells is 17.7%, and the light-induced attenuation is 0.4%.

Embodiment 3

[0036] (1) Put 10 silicon wafers (125×125mm) on the conveyor belt of the vacuum blasting machine, and set the conveyor belt speed to 12mm / s;

[0037] (2) The conveyor belt sends the silicon wafer to the sandblasting room, and adjusts the sandblasting pressure, nozzle pressure and number of nozzles. The sandblasting pressure of the nozzle main pipe is 0.75MPa, the nozzle pressure is 0.09MPa, and the number of nozzles is set to 14;

[0038] (3) The air source pressure is set to 0.5 MPa;

[0039] (4) The silicon wafer passes through the sandblasting room at a speed of 12mm / s, and the surface of the silicon wafer is formed into a suede surface by polishing the silicon carbide sand in the sandblasting room;

[0040] (5) The conveyor belt transports the silicon wafer out of the sandblasting room, and the texturing is completed.

[0041] The pyramid size of monocrystalline silicon wafers prepared by this process is 5 μm, the conversion efficiency of monocrystalline silicon cells is ...

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Abstract

The invention provides a mechanical texturing method of a monocrystalline wafer for a solar cell. The texturing method comprises the following specific steps: placing the monocrystalline wafer in a vacuum sand blasting room, and regulating the sand blasting pressure of a nozzle to 0.07-0.12 MPa; turning on a sand blasting switch, and texturing the surface of the monocrystalline wafer through the polishing of silicon carbide sand in the sand blasting room; and polishing for 80-140 seconds, and turning off the sand blasting switch to finish the texturing process. In the mechanical texturing method, the silicon carbide sand is blasted onto the surface of the monocrystalline wafer in the sand blasting room so as to obtain the textured surface; as alkali compounds such as sodium hydroxide, potassium hydroxide or the like are not introduced in the texturing process, no alkali metal ions exist on the obtained textured surface, and no alkali metal ions are dispersed into the wafer in the subsequent processing process, thereby improving the stability of the cell and effectively reducing the photoinduced attenuation of the cell. The method requires simple equipment, has low cost, adopts cheap raw materials, prevents pollution, is suitable for large-scale production and can save about 15% cost in comparison with the traditional alkali texturing method.

Description

technical field [0001] The invention relates to a monocrystalline silicon wafer for solar cells, in particular to a mechanical texturing method for monocrystalline silicon wafers for solar cells. Background technique [0002] As monocrystalline silicon solar cells become the main force of solar power generation due to their long service life and high conversion efficiency, how to effectively solve the light-induced attenuation of monocrystalline silicon cells has become a crucial issue. The problem of light-induced attenuation of monocrystalline silicon cells is mainly due to the use of alkali compounds such as sodium hydroxide or potassium hydroxide in the texturing process to etch monocrystalline silicon wafers to make textured surfaces, resulting in residual metal sodium ions on the surface of silicon wafers. or potassium ions, although strong acid is used to remove most of the metal sodium ions or potassium ions in the subsequent cleaning process, but there are still som...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24C1/00H01L31/18
CPCY02P70/50
Inventor 谢芳吉钟运辉闫石刘亚坤陈静万翠凤王倩
Owner JIANGSU AIDE SOLAR ENERGY TECH CO LTD
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