Mask image defection detection method and detection system thereof

Abstract

The invention relates to a mask image defection detection method and a detection system thereof. The method comprises the following steps: step of obtaining a mask image-obtaining a mask image to be detected and a normal mask image; step of feature extraction and format conversion-extracting edge characteristic and converted it as geometric figure format to be stored; step of filling-filling the blank area of the rectangular edge contour of the geometric figure; step of data merging-carrying out figure superposition; step of contour simulation-carrying out the contour simulation of wafer; step of critical dimensions analysis of the simulated contour-measuring the critical dimensions and calculating the difference of critical dimensions; and step of judge-judging whether the mask defection restoration is succeed or not through the difference of critical dimensions. The invention further relates to a mask image defection detection system. The method and system in the invention is simple and practicable, and has a substantial effect, thus the lithography mask production cost of 45 nm or higher nanometer level lithography technology is effectively reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a method and system for detecting mask pattern defects in a photolithography mask preparation process. Background technique [0002] Semiconductor integrated circuits (Integrated Circuit, referred to as IC), that is, semiconductor chips, need to go through multiple processes such as material preparation, plate making, photolithography, cleaning, etching, doping, and chemical mechanical polishing during the manufacturing process. most critical. The lithography process determines the advanced level of the semiconductor chip manufacturing process. It is precisely because of the great progress of the lithography technology that the integrated circuit manufacturing process has been brought from the micron era to the deep submicron era, and then into the nanometer era. The photolithography process requires a complete set (several pieces or up to ...

AI Technical Summary

Problems solved by technology

However, the traditional detection method of mask pattern defects using AIMS is technically complicated. After the era of sub-65nm technology nodes, the AIMS system needs to introduce the immersion method to detect the mask pattern defects of 45nm and higher-order nanoscale nodes

The structure of this AIMS system with immersion is very complicated, and it is very expensive to purchase a simulation wafer printer equipped with an AIMS system with immersion function, which makes the detection cost of mask pattern defects too high

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