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UV-lithographic micro-patterned organic thin film transistor semiconductor material and application

A technology of organic semiconductors and organic thin films, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of photocrosslinkable semiconductor materials that have not been reported in any form.

Inactive Publication Date: 2011-09-28
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there has been no report in any form on the application of blending technology to prepare photocrosslinkable semiconductor materials.

Method used

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  • UV-lithographic micro-patterned organic thin film transistor semiconductor material and application
  • UV-lithographic micro-patterned organic thin film transistor semiconductor material and application
  • UV-lithographic micro-patterned organic thin film transistor semiconductor material and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Dissolve P3HT and polyvinyl cinnamate (PVCN) in trichlorethylene at different ratios (P3HT / PVCN: 50% / 50%-1% / 99%) to make a solution with a concentration of 2%, and then To this solution was added dropwise 1-50 vol% dioxane; a thin film was prepared on a silicon wafer with a rotation speed of 2000 rpm.

Embodiment 2

[0034] Dissolve P3HT and polyvinyl cinnamate (PVCN) in different ratios (P3HT / PVCN: 50% / 50%-1% / 99%) in dichloromethane at 40°C to make a concentration of 2%. solution, and then the temperature of the solution was lowered to room temperature at a rate of 5°C / 10min, and a thin film was prepared on a silicon wafer with a rotation speed of 2000rpm.

Embodiment 3

[0036] Replace polyvinyl alcohol cinnamate with polyvinyl alcohol p-methyl cinnamate, and then prepare a film according to the steps in Example 2.

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Abstract

A UV-lithographic micro-patterned organic thin film transistor semiconductor material is a blend film prepared by the process steps of: blending a semiconductor polymer and a UV-crosslinking polymer in an organic solvent, reducing the solubility of an organic semiconductor to precipitate continuous nano fibers, dispersing the nano fibers in a UV-crosslinking polymer matrix, and finally spin-coating, wherein the mass of the organic semiconductor component accounts for 1% to 50% the total mass of the blend film. Photosensitive groups contain cinnamate group, p-methyl cinnamate group, acrylate group, methyl acrylate group, epoxy group or oxetanyl group. The semiconductor material can be used as the semiconductor layer in the fabrication of organic thin film transistors.

Description

1. Technical field [0001] The invention relates to an organic thin film transistor semiconductor material capable of micropatterning by ultraviolet lithography. The material can form a patterned semiconductor thin film after exposure in the range of ultraviolet light (wavelength 200-400nm). 2. Background technology [0002] An organic thin film transistor (OTFT) is a transistor device in which a semiconductor layer is made of an organic semiconductor material. It is mainly composed of a gate electrode, an insulating layer, an organic semiconductor layer, and source and drain electrodes. Compared with silicon TFT, OTFT has the advantages of low preparation temperature, large-area uniform growth, easy processing and preparation, and performance control through molecular design, so it can meet the requirements of new display technology and is the core technology of next-generation flat panel display. Among them, solution-processable organic semiconductor materials are of partic...

Claims

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Application Information

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IPC IPC(8): H01L51/30H01L51/05
Inventor 邱龙臻王晓鸿吕国强
Owner HEFEI UNIV OF TECH
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