Ultrahigh-purity germanium single crystal preparation process and special equipment

Abstract

The invention relates to a detector-grade ultrahigh-purity germanium single crystal preparation process and special equipment thereof. The process comprises two parts of the cleanness of a polycrystal ingot and crystal pulling equipment and crystal pulling by a single crystal furnace. The special equipment, namely the single crystal furnace, in the process comprises a fixed device, a heating device, a cooling device, a ventilating device and a crystal pulling device. The reactant and the reaction equipment in the invention are both subjected to strict physical and chemical cleaning, the purity of cleaning liquid is high, the reaction process is always carried out in an ultraclean working platform, and the purity requirement on the reactant and the reaction environment is high, so that a precondition is provided for manufacturing high-purity products; the reaction equipment has higher cleanness, and a furnace body, a crucible and internal parts are all made of high-purity quartz piecesinstead of the traditional graphite materials; a high-frequency induction heating way is adopted for preventing impurity contamination generated during direct heating by resistance graphite; and the probability of mixing impurities in the product pulling process is reduced, and the purity of products is guaranteed.

Description

technical field [0001] The invention relates to a detector-level ultra-high-purity germanium single crystal preparation process and special equipment for the process. Background technique [0002] Existing military and national defense, scientific research, and various fields of the national economy need to use high-purity germanium gamma-ray, x-ray radiation detectors and energy spectrometers for nuclear radiation detection, and high-purity germanium single crystals for gamma-ray detection The detector has the best resolution among all gamma-ray detectors with an energy resolution of <0.2%. The net impurity concentration of this detector-grade germanium single crystal material must be less than 2×10 10 cm -3 . In order to obtain such a high-purity germanium single crystal, after purifying to a purity of 5-6 nines by usual chemical methods, it must be divided into two steps. The first step is to use a special zone melting purification method to obtain detector-grade ge...

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Problems solved by technology

[0003] So far, the germanium single crystal ingots produced by the semiconductor germanium industry have been using the Czochralski method. The technology and process of the VGF method are also used in the preparation of solar germanium germanium single crystals, and all of them need to be doped without further purification of germanium itself. , the purity of the semiconductor germanium single crystal produced is generally 5-6N, and the highest may reach 8-9N. The technology and process in the field of semiconductor germanium materials cannot meet the purity requirements of 12-13N. At present, all domestically rely on import

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