Crystal growth method and substrate manufacturing method

Abstract

The invention provides a substrate manufacturing method and a crystal growth method. The substrate manufacturing method comprises the following steps: repeatedly and alternately growing a crystal bar provided with a first crystal face orientation and a second crystal face orientation; and cutting off a crystal plate required for orientation from the crystal bar according to the crystal face orientation so as to obtain a monocrystal substrate with high quality (low stress and low dislocation density) and large size. According to the invention, the industrial production in mass can be realized without using the laser peeling and the stress self-peeling, and the manufacturing cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor material manufacturing, in particular to a crystal growth method and a substrate manufacturing method. Background technique [0002] The third-generation semiconductor materials are also called wide-bandgap semiconductors because their energy bandgap is generally greater than 3.0 electron volts. Wide bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) have excellent properties that traditional silicon-based and gallium arsenide-based semiconductors do not have and can It meets the working requirements of high-power, high-temperature, high-frequency and high-speed semiconductor devices, and has a wide range of application prospects in the automotive and aviation industries, medical care, military and general lighting. Among them, gallium nitride, aluminum nitride and indium nitride are collectively referred to as Group ...

AI Technical Summary

Problems solved by technology

[0008] Although the above two self-supporting substrate technologies solve the warpage problem during the epitaxial growth process, the cost of the self-supporting substrate is very high, which is determined by its technical characteristics

First of all, the laser beam used in the laser lift-off method has a small cross-sectional area, a long scanning time, and a bottleneck in production; secondly, the yield of the laser lift-off method and the stress self-lift-off method is very low and cannot be applied to large-scale industrial production. The cost is very high, so it cannot be used for the production of high-brightness high-power LEDs

[0009] In addition, since the self-supporting substrate is still a heterogeneous substrate, there is still a high density of dislocations in the self-supporting substrate, which is not suitable for high-end devices such as substrates required for the growth of lasers.

[0010] Finally, the self-supporting substrate is generally a polar surface with a thickness of less than 1 mm, and it is impossible to obtain a large-sized non-polar surface by cutting means

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