Combined type high-power semiconductor laser side pumping source and preparation method thereof

A side-pumped semiconductor technology, applied in the field of laser optoelectronics, can solve the problems of inconvenient disassembly and maintenance, low yield rate, and low pass rate, and achieve the effect of convenient reliability testing, high yield rate, and simple testing

Inactive Publication Date: 2011-10-05
FOCUSLIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] The present invention aims to provide a combined high-power semiconductor laser side pumping source and its preparation method to solve the problem of low yield, low pass rate, inconvenient disassembly and maintenance, and long service life of the semiconductor laser pumping source in the prior art. Short and other technical issues

Method used

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  • Combined type high-power semiconductor laser side pumping source and preparation method thereof
  • Combined type high-power semiconductor laser side pumping source and preparation method thereof
  • Combined type high-power semiconductor laser side pumping source and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] Such as Figure 4 , Figure 5 and Figure 6 The combined high-power semiconductor laser side pump source shown (compared with figure 1 The layout shown in the schematic diagram is more compact), including the semiconductor laser module group 1 and the heat sink 2. The semiconductor laser module 1 is fixed on the heat sink 2 through a movable connection method (such as a limiting groove, snap joint or other known mechanical connection methods).

[0067] The semiconductor laser module group 1 is composed of semiconductor laser modules 6, 7, 8, 9, 10 and 11;

[0068] The above-mentioned semiconductor laser modules 6, 7, 8, 9, 10, 11 are pre-tested and aged and screened out semiconductor laser modules with known performance;

[0069] The semiconductor laser modules 6, 7, 8, 9, 10, 11 are composed of chips 4 and substrates 5 with different wavelengths respectively.

[0070] Chip 4 is selected to be formed by connecting 6-10 bar chips, and may also be formed by connectin...

Embodiment 2

[0079] Such as Figure 7 The combined high-power semiconductor laser side pump source shown in the figure is triangular in shape.

[0080] The semiconductor laser module group 1 is composed of semiconductor laser modules 12 , 13 , 14 arranged in an arrangement.

[0081] Semiconductor laser modules 12, 13, 14 are composed of chip 4 and substrate 5 respectively.

[0082] The material of the substrate 5 is a material with high thermal conductivity.

[0083] What chip 4 selects for use is that 10 bar chips are connected to form.

[0084] The semiconductor laser modules 12 , 13 , 14 are semiconductor laser modules with known good performances that are screened out after testing and aging in advance.

[0085] Fixing the semiconductor laser modules 12, 13, 14 on the heat sink 2 by screws can also be fixed on the heat sink 2 by welding.

[0086] Above-mentioned radiator 2 can select the material conduction refrigeration of high thermal conductivity.

Embodiment 3

[0088] Such as Figure 8 The combined high-power semiconductor laser side pumping source shown is in the shape of a pentagon, which includes a semiconductor laser module group 1 and a heat sink 2 .

[0089] The semiconductor laser module group 1 is composed of semiconductor laser modules 15, 16, 17, 18 and 19;

[0090] The semiconductor laser modules 15 , 16 , 17 , 18 , and 19 are semiconductor laser modules with known good performances that are screened out after testing and aging in advance.

[0091] The semiconductor laser modules 15, 16, 17, 18, 19 can be fixed on the heat sink 2 by screws or can be fixed on the heat sink by welding.

[0092] Semiconductor laser modules 15, 16, 17, 18, 19 are composed of chip 4 and substrate 5 respectively.

[0093] What chip 4 selects for use is that 7 micro-bar chips are connected to form.

[0094] The material of the substrate 5 is a material with high thermal conductivity.

[0095] Above-mentioned radiator 2 can select the material...

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Abstract

The invention discloses a combined type high-power semiconductor laser side pumping source and a preparation method thereof. The invention aims to solve the technical problems of low finished product rate, low yield, inconvenience for assembly, disassembly and maintenance, shorter service life, and the like of a semiconductor laser pumping source in the prior art. The side pumping source comprises a semiconductor laser module group and a heat radiator, wherein the semiconductor laser module group comprises one or more semiconductor laser modules; and all semiconductor laser modules are fixedly arranged on the heat radiator in a movable linkage way or a welding way. In the invention, the semiconductor laser modules can be tested, aged and screened in advance and can be singly packaged, tested and aged; and different chips can be selected for combining and controlling, and the multi-wavelength wide spectrum output can be realized. If one module of the pumping source is abnormal in the use process, the module can be singly replaced so that the combined type high-power semiconductor laser side pumping source disclosed by the invention has the advantages of higher yield and longer service life.

Description

technical field [0001] The invention belongs to the technical field of laser optoelectronics, relates to a semiconductor laser, in particular to a combined high-power semiconductor laser side pump source and a preparation method thereof. Background technique [0002] The most effective pumping source for solid-state lasers is semiconductor lasers, and all-solid-state lasers pumped by high-power semiconductor lasers have become a hot spot in recent years. Compared with the pump light source of the flash lamp, the semiconductor laser has outstanding advantages: (1) long working time; (2) low power consumption; (3) small size; (4) more importantly, its spectrum and laser material absorption The spectral matching is good, so the thermal effect generated is small, which is conducive to improving the working stability and beam quality of the solid-state laser. [0003] As all-solid-state lasers show more and more broad application prospects in industrial, medical, military and ot...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/04H01S5/024
Inventor 刘兴胜宗恒军王警卫康利军张彦鑫
Owner FOCUSLIGHT TECH
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