Method to raise production efficiency of czochralski silicon mono-crystal

A technology of production efficiency and Czochralski silicon, which is applied in the directions of single crystal growth, single crystal growth, and self-melt pulling method, etc., can solve problems such as the limitation of production efficiency of Czochralski silicon single crystal, and save production maintenance time and operation Simple and time-saving effect

Inactive Publication Date: 2011-10-19
XIAN HUAJING ELECTRONICS TECH
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Problems solved by technology

Nowadays, in the production of Czochralski silicon single crystal, the finishing process must be carried out, which greatly limits the production efficiency of Czochralski silicon single crystal

Method used

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  • Method to raise production efficiency of czochralski silicon mono-crystal
  • Method to raise production efficiency of czochralski silicon mono-crystal

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Embodiment Construction

[0036] like figure 1 The shown method for improving the production efficiency of Czochralski silicon single crystal is characterized in that the method comprises the following steps:

[0037] Step 1. Preparation of silicon raw materials and dopants: According to the conventional preparation method of silicon raw materials for single crystal furnaces, silicon raw materials for growing Czochralski monocrystalline silicon are prepared, and according to the conventional cleaning treatment methods of silicon raw materials for single crystal furnaces, The prepared silicon raw material is cleaned; at the same time, according to the type and resistivity of the silicon single crystal to be produced, the type and amount of dopant to be added are determined, and the dopant used for growing Czochralski monocrystalline silicon is determined. Prepare.

[0038] In this embodiment, in the same way as the conventional method for preparing silicon raw materials for growing Czochralski single c...

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Abstract

The invention discloses a method to raise production efficiency of czochralski silicon mono-crystal. The method comprises the following steps: 1. preparation of silicon raw material and a doping agent; 2. charging; 3. processing in a mono-crystal furnace: completing processes of furnace mixing, vacuum-pumping, stock melting, seeding, diameter controlling, casting speed increase and equal diametergrowth, according to a routine processing technology of a czochralski method; 4. post processing: first, a graphite thermal field system of the mono-crystal furnace is closed to lower thermal power of the mono-crystal furnace to zero; then residual silicon melt surface in a quartz crucible begins to crystallize, and when the crystals are about to contact silicon mono-crystals, the mono-crystals are lifted from the silicon melt liquid surface rapidly; last, crystal lifting and crystal collection are carried out to obtain silicon mono-crystal finished product. The invention has the advantages of reasonable design, simple method steps, convenient realization, easy grasp, good usage effect. An ending process of crystal drawing is omitted to increase production efficiency, so as to solve the problem that czochralski silicon mono-crystal production efficiency is restricted by a demanded ending process in the silicon mono-crystal production process.

Description

technical field [0001] The invention belongs to the technical field of Czochralski silicon single crystal production, and in particular relates to a method for improving the production efficiency of Czochralski silicon single crystals. Background technique [0002] Monocrystalline silicon, also known as silicon single crystal, is a semiconductor material. In recent years, with the rapid development of the photovoltaic industry, monocrystalline silicon has been used to make solar cells, showing a situation of short supply. With the development of high technology, it is the common wish of every material manufacturer and device manufacturer to produce near-perfect high-quality monocrystalline silicon. This monocrystalline silicon has good cross-sectional resistivity uniformity, long life, and low carbon content. , The density of micro-defects is small, and the oxygen content can be controlled. [0003] At present, the methods of producing single crystal silicon include Czochr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/06
Inventor 周建华
Owner XIAN HUAJING ELECTRONICS TECH
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