Polysilicon nanowire solar cell and preparation method thereof

A technology of solar cells and nanowires, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high cost of preparation methods, achieve strong anti-reflection properties, enhance absorption, and increase collection effects

Inactive Publication Date: 2011-10-26
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing technology is to prepare nanowire arrays on a single crystal s

Method used

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  • Polysilicon nanowire solar cell and preparation method thereof
  • Polysilicon nanowire solar cell and preparation method thereof
  • Polysilicon nanowire solar cell and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0030] 1. Clean the p-type polysilicon wafer according to the standard semiconductor cleaning procedure (RCA method), and dry it with nitrogen gas at room temperature for later use. At normal temperature and pressure, put the prepared p-type polysilicon wafer into a solution filled with HF (20%) and AgNO 3 (0.045mol / L) etching solution in a Teflon (Teflon) beaker, sealed and reacted for 15min. Take out the sample with plastic tweezers, and rinse off the residual etching solution with plenty of deionized water. The sample was then immersed in dilute HNO 3 (20%) solution to remove reduced silver deposits. Finally, wash it dry with plenty of deionized water, and dry it with nitrogen gas for later use.

[0031] 2. Through thermal diffusion, POCl 3 As the source, the polysilicon nanowire array is n-type doped at a temperature of 930°C for 20 minutes to form a p-n junction, wherein the polysilicon nanowire structure layer 4 is n-type doped, and the polysilicon layer 5 is a p-typ...

Embodiment 2

[0039]1. Clean the p-type polysilicon wafer according to the standard semiconductor cleaning procedure (RCA method), and dry it with nitrogen gas at room temperature for later use. At normal temperature and pressure, put the prepared p-type polysilicon wafer into a solution filled with HF (20%) and AgNO 3 (0.045mol / L) etching solution in a Teflon (Teflon) beaker, sealed and reacted for 30min. Take out the sample with plastic tweezers, and rinse off the residual etching solution with plenty of deionized water. The sample was then immersed in dilute HNO 3 (20%) solution to remove reduced silver deposits. Finally, wash it dry with plenty of deionized water, and dry it with nitrogen gas for later use.

[0040] 2. Through thermal diffusion, POCl 3 As the source, the polysilicon nanowire array is n-type doped at a temperature of 930°C for 20 minutes to form a p-n junction, wherein the polysilicon nanowire structure layer 4 is n-type doped, and the polysilicon layer 5 is a p-type...

Embodiment 3

[0048] 1. Clean the p-type polysilicon wafer according to the standard semiconductor cleaning procedure (RCA method), and dry it with nitrogen gas at room temperature for later use. At normal temperature and pressure, put the prepared p-type polysilicon wafer into a solution filled with HF (20%) and AgNO 3 (0.045mol / L) etching solution in a Teflon (Teflon) beaker, sealed and reacted for 60min. Take out the sample with plastic tweezers, and rinse off the residual etching solution with plenty of deionized water. The sample was then immersed in dilute HNO 3 (20%) solution to remove reduced silver deposits. Finally, wash it dry with plenty of deionized water, and dry it with nitrogen gas for later use.

[0049] 2. Through thermal diffusion, POCl 3 As the source, the polysilicon nanowire array is n-type doped at a temperature of 930°C for 20 minutes to form a p-n junction, wherein the polysilicon nanowire structure layer 4 is n-type doped, and the polysilicon layer 5 is a p-typ...

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Abstract

A polysilicon nanowire solar cell and a preparation method thereof, which belong to the solar cell technology field, are disclosed. The polysilicon nanowire solar cell comprises: a composite layer gate electrode, a transparent ITO conduction film layer, a silicon nitride passivation antireflection layer, n type silicon nanowire arrays, a p type silicon substrate and a metal back electrode, which are successively arranged from top to bottom and wherein the transparent ITO conduction film layer, the silicon nitride passivation antireflection layer and the n type silicon nanowire arrays are square wave structures. In the invention, large area polysilicon nanowires can be prepared at normal temperature and pressure under the following conditions: adopting a galvanic displacement method; regarding polysilicon nanowire arrays as an absorption layer of the solar cell; depositing the silicon nitride passivation antireflection layer and the ITO film. Photoelectric conversion efficiency of the solar cell can be raised by using the prepared polysilicon nanowire solar cell.

Description

technical field [0001] The invention relates to a battery and its preparation in the technical field of solar cells, in particular to a polycrystalline silicon nanowire solar cell and a preparation method thereof. Background technique [0002] As the world's energy becomes increasingly tense, people's emphasis on renewable energy has reached an unprecedented height. Facing the pressure of global energy shortage and harsh living environment, countries around the world are actively researching and developing renewable energy, among which solar energy has become a research hotspot due to its unique advantages. From the current development process of international solar cells, it can be seen that its development trend is monocrystalline silicon, polycrystalline silicon, ribbon silicon, and thin film materials. [0003] Recently, the nanowire structure has become the focus of research because of its unique light-trapping structure and optoelectronic properties. After searching ...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/02H01L31/04H01L31/18
CPCY02E10/50Y02P70/50
Inventor 王庆康万霞王阳培华李翔胡克想
Owner SHANGHAI JIAO TONG UNIV
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