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Poly-silicon solar cell

A technology for solar cells and polycrystalline silicon, applied in the field of solar cells, can solve the problem of high cost of preparation methods, and achieve the effects of strong anti-reflection properties, enhanced absorption, and increased current collection

Inactive Publication Date: 2017-05-31
袁献武
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The existing technology is to prepare an array on a single crystal silicon substrate, and the cost of the preparation method is relatively high

Method used

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  • Poly-silicon solar cell

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Embodiment Construction

[0012] The embodiments of the present invention will be described in detail below. This embodiment is implemented on the premise of the technical solution of the present invention. Detailed implementation modes and specific operation procedures are given, but the protection scope of the present invention is not limited to the following implementations. example.

[0013] 1. Clean the p-type polysilicon wafer according to the standard semiconductor cleaning procedure (RCA method), and dry it with nitrogen at room temperature for later use. Under normal temperature and pressure, put the prepared p-type polycrystalline silicon wafer into HF (20%) and AgNO 3 (0.045mol / L) In a Teflon beaker of the etching solution, the reaction is sealed for 60 minutes. Take out the sample with plastic tweezers, and rinse off the residual etching solution with a large amount of deionized water. Then immerse the sample in dilute HNO 3 (20%) solution to remove reduced silver deposits. Finally, clean it...

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Abstract

The invention discloses a poly-silicon solar cell. The poly-silicon solar cell comprises a composite layer gate electrode, a transparent indium tin oxide (ITO) conductive thin film layer, a silicon nitride passivation reflection-resistant layer, an n-type silicon array, a p-type silicon substrate and a metal back electrode which are sequentially arranged, and the transparent ITO conductive thin film, the silicon nitride passivation reflection-resistant layer and the n-type silicon array are all of square wave structures. By a galvanic replacement method, the poly-silicon array is used as a solar cell absorption layer, the silicon nitride passivation reflection-resistant layer and an ITO thin film are deposited, and thus, large-area poly-silicon is prepared under normal temperature and normal pressure; and by the poly-silicon solar cell obtained through preparation, the photoelectric conversion efficiency of the solar cell is improved.

Description

Technical field [0001] The invention relates to the technical field of solar cells, in particular to a polycrystalline silicon solar cell. Background technique [0002] With the increasingly tense world energy, people's attention to renewable energy has reached an unprecedented height. Facing the global energy shortage and the pressure of the harsh living environment, countries around the world are actively researching and developing renewable energy. Among them, solar energy has become a research hotspot with its unique advantages. From the current development process of international solar cells, it can be seen that its development trend is monocrystalline silicon, polycrystalline silicon, ribbon silicon, and thin film materials. [0003] Due to the rich content of silicon materials and compatibility with current semiconductor micromachining processes, solar cells based on silicon structures have attracted more and more attention. The existing technology is to prepare an array ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/0224H01L31/068H01L31/18
CPCH01L31/02167H01L31/022475H01L31/068H01L31/182Y02E10/546Y02P70/50
Inventor 袁献武
Owner 袁献武
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