Anti-reflective underlayer composition
A composition and anti-reflection technology, which is applied in the photoengraving process of the pattern surface, photosensitive materials and instruments for opto-mechanical equipment, etc., can solve the problem of not providing resistance, and achieve better pattern outline and margin. , The effect of sufficient resistance to multiple etchings and high etching selectivity
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Embodiment 1 and 2
[0071] 0.8 g of the polymers prepared according to Synthesis Examples 1 and 2 were independently measured as a sample, and the sample was dissolved in 10 g of 1-methyl-2-pyrrolidone, whereby solutions of Examples 1 and 2 were prepared, respectively.
experiment example 1
[0075] Each of the sample solutions prepared in Examples 1 and 2 and Comparative Example 1 was spin-coated on a silicon wafer, and baked at 250° C. for 180 seconds to form thick film.
[0076] The refractive index (n) and extinction coefficient (k) of these films were measured using an ellipsometer (J.A. Woollam). The results are shown in Table 1.
[0077] Table 1
[0078]
[0079] The evaluation results show that the films formed from the compositions prepared according to the present invention have suitable refractive index and absorption for antireflection layers at the wavelengths of ArF (193 nm) and KrF (248 nm).
[0080] On the other hand, the film formed from the composition prepared according to Comparative Example 1 had low absorption characteristics at the wavelength of KrF (248 nm).
experiment example 2
[0082] Each of the sample solutions prepared in Examples 1 and 2 and Comparative Example 1 was spin-coated on a silicon wafer covered with aluminum, and baked at 250° C. for 60 seconds to form thick film.
[0083]
[0084] According to the pattern evaluation results, the film formed from the composition prepared according to the present invention was good in terms of pattern profile or margin. However, in the case of the composition prepared according to Comparative Example 1, the result
[0085] A KrF photoresist was coated on each film, baked at 110° C. for 60 seconds, exposed using an exposure system (ASML, XT: 1400, NA 0.93), and developed with an aqueous TMAH solution (2.38 wt%). The 90 nm line and space patterns were observed using a field emission scanning electron microscope (FE-SEM). The pattern, exposure latitude (EL) margin as a function of exposure energy and depth of focus (DoF) margin as a function of distance from the light source were measured. The resul...
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