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Thin film solar cell

A technology for solar cells and thin films, applied in the field of solar cells, can solve the problems of low photoelectric conversion efficiency and poor electrical conductivity, and achieve high photoelectric conversion efficiency, easy preparation, and enhanced built-in electric field effects.

Inactive Publication Date: 2014-08-20
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large band gap (about 3.5eV) of the PZT film, it can only absorb ultraviolet light in the solar spectrum, and the power of ultraviolet light in sunlight only accounts for about 5% of the entire solar spectrum; and its conductivity is relatively low. Poor (less than 20mA / cm at room temperature 2 ), so its photoelectric conversion efficiency is usually low, generally below 0.01%

Method used

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Examples

Experimental program
Comparison scheme
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Embodiment 1

[0031] See attached Figure 1~7 As shown, ITO thin film is deposited on glass to form ITO conductive glass. Its light transmittance is greater than 85%, and its surface resistance is about 90 Ω / □, forming a conductive and transparent conductive ITO / glass; use sol-gel on ITO / glass A 320 nm thick PZT film was deposited by the method, and annealed under oxygen at 580°C to form a polycrystalline PZT film; then, n-type Cu was deposited on the PZT / ITO / glass by magnetron sputtering 2 O, with a thickness of 80nm, forms Cu 2 O / PZT / ITO / glass structure.

[0032] Test Cu 2 XRD of O / PZT / ITO / glass (such as figure 2 Curve 2 in ), the PZT film is a pure ferroelectric phase, (100) preferred orientation, and has Cu 2 O phase exists.

[0033] Test Cu 2 O / PZT / ITO / glass transmission spectrum (such as image 3 In curve 2), the absorption cutoff wavelength is around 430nm. The absorption spectrum of this sample is wider than that of the sample in Comparative Example 1.

[0034] Then magnet...

Embodiment 2

[0037] Deposit ITO film on glass, the light transmittance is greater than 85%, and the surface resistance is about 90 Ω / □, forming a conductive and transparent conductive ITO / glass; depositing a 240nm thick PZT film on the ITO / glass by sol-gel method, after 580 ℃ oxygen annealing to form a polycrystalline PZT film; then deposit n-type Cu on the PZT / ITO / glass by magnetron sputtering 2 O, with a thickness of 160 nm, forms Cu 2 O / PZT / ITO / glass structure.

[0038] Test Cu 2 XRD of O / PZT / ITO / glass (such as figure 2 Curve 3 in ), the PZT film is a pure ferroelectric phase, (100) preferred orientation, and has Cu 2 O phase exists.

[0039] Test Cu 2 O / PZT / ITO / glass transmission spectrum (such as image 3 In curve 3), the absorption cutoff wavelength is around 450nm. The absorption spectrum of this sample is broader than that of the sample in Example 1.

[0040] Then magnetron sputtering is used to deposit upper electrode Ag on the PZT / ITO / glass to form a solar cell.

[0041...

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Abstract

The invention discloses a thin film solar cell which sequentially comprises ITO (Indium Tin Oixde) conductive glass, a PZT (Pbbased Lanthanumdoped Zirconate Titanates) thin film layer, a Cu2O thin film layer and a metal electrode from top to bottom, wherein the PZT thin film layer is arranged on a conductive surface of the ITO conductive glass; the metal electrode and the Cu2O thin film layer are in an ohmic contact; the conductive surface of the ITO conductive glass and the PZT thin film layer form a Schottky contact structure; and the metal electrode and the conductive surface of the ITO conductive glass form a positive and negative electrode structure of a solar cell. The thin film solar cell with a Cu2O / PZT / ITO structure has higher short-circuit currents and photoelectricity conversion efficiency; compared with the common thin film solar cell with PZT / ITO structure, the thin film solar cell disclosed by the invention has the advantages that short-circuit currents of the solar cell disclosed by the invention are increased by 40-130 times and can reach 6.32mA / cm<2> and an unexpected effect is achieved.

Description

technical field [0001] The invention relates to a solar cell, in particular to a thin-film solar cell. Background technique [0002] Energy is a resource that provides different types of energy for all human activities. It is one of the most important basic resources of human society. It can be said that it is a material that is inseparable from the present and future of human beings, so it has attracted people's attention. As a clean energy source, solar energy has become the focus of attention due to its wide coverage, low environmental restrictions, and no need for transportation. [0003] At present, the development and utilization of solar energy are mainly divided into thermal energy utilization and light energy utilization. Solar thermal energy utilization refers to the use of sunlight to heat water to generate steam to use its internal energy; light energy utilization refers to the use of solar cells to convert solar energy into electrical energy. to make use of. B...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/0352H01L31/048B32B17/06B32B9/04
CPCY02E10/542
Inventor 郑分刚曹大威王春燕沈明荣
Owner SUZHOU UNIV