Method for forming alternative arrangement of P-type and N-type semiconductor thin layers
An N-type semiconductor, alternate arrangement technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of lower breakdown voltage and high cost, and achieve the effect of improving breakdown voltage
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Embodiment 1
[0036] A highly doped N-type impurity substrate silicon wafer 51 is used. On this substrate silicon chip 51, grow the N-type thick epitaxial layer 52 of low doping (referring to Figure 4 ), the thickness of the epitaxial layer 52 is between 40.0 μm-50.0 μm. One or several layers of silicon oxide are grown on the upper surface of the epitaxial layer 52 as a mask for trench etching, and a trench 55 with a depth of 35.0-50.0 μm is etched in the epitaxial layer 52 (see Figure 5 ). The silicon oxide mask can be removed or left after trench etching. If the silicon oxide mask is kept, during the subsequent process of silicon epitaxial growth filling the trench 55, by adjusting the ratio of the flow rate of the silicon source and the flow rate of the halide gas, the effect that silicon does not grow on the surface of the silicon oxide can be achieved. After the trench 55 is etched, the trench 55 is filled with a P-type silicon epitaxial growth process.
[0037] When the trench 5...
Embodiment 2
[0041] Adopt the N-type impurity substrate silicon wafer 51 with high doping, grow the N-type thick epitaxial layer 52 of low doping on this substrate silicon wafer 51 (referring to Figure 4 ), the thickness of the epitaxial layer 52 is between 40.0 μm-50.0 μm. One or several layers of silicon oxide are grown on the upper surface of the epitaxial layer 52 as a mask for trench etching, and a groove 55 with a depth of 35.0-50.0 μm is etched in the epitaxial layer 52 (see Figure 5 ).
[0042] The silicon oxide mask can be removed or left after trench etching. If the silicon oxide mask is kept, during the subsequent process of silicon epitaxial growth filling the trench 55, by adjusting the ratio of the flow rate of the silicon source and the flow rate of the halide gas, the effect that silicon does not grow on the surface of the silicon oxide can be achieved. After the trench 55 is etched, the trench 55 is filled with a P-type silicon epitaxial growth process.
[0043] When ...
Embodiment 3
[0047] Adopt the N-type impurity substrate silicon wafer 51 with high doping, on this substrate silicon wafer 51, grow the N-type thick epitaxial layer 52 of low doping (referring to Figure 4 ), the thickness of the epitaxial layer 52 is between 40.0 μm-50.0 μm. One or several layers of silicon oxide films are grown on the upper surface of the epitaxial layer 52, and the silicon oxide films can prevent silicon epitaxy from growing on the surface of the trench during subsequent silicon epitaxial filling, and prevent the trench from being sealed prematurely during the filling process, thereby Reduce the difficulty of trench filling. Using photoresist as a mask for trench etching, etch a trench 55 with a depth of 35.0-50.0 μm in the epitaxial layer 52 (see Figure 5 ). The photoresist is removed after the trench 55 is etched. The trench 55 is filled with a P-type silicon epitaxial growth process.
[0048] When the trench 55 is filled by the P-type silicon epitaxial growth pr...
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Abstract
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