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A method of growing non-polar surface aln template on silicon substrate
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A non-polar surface, silicon substrate technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem that non-polar surface GaN templates cannot be used to grow non-polar surface AlGaN, template surface cracks, Surface unevenness and other problems, to achieve the effect of simple method, improved efficiency and broad application prospects
Inactive Publication Date: 2011-12-14
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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[0008] The present invention aims to solve the problem that the existing non-polar GaN templates grown on silicon substrates cannot be used to grow non-polar AlGaN, especially when there are cracks and uneven surfaces on the template surface when growing AlGaN with high Al composition on GaN templates To solve the problem, provide a method for epitaxially growing AlN templates with non-polar surfaces on silicon substrates
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specific Embodiment approach 1
[0020] Specific implementation mode 1. Combination figure 1 Describe this embodiment mode, a kind of method for growing non-polar surface AIN template on silicon substrate, this method is realized by the following steps:
[0021] Step 1. Select a silicon substrate;
[0022] Step 2, using photolithography to prepare a strip photoresistmask pattern on the silicon substrate selected in step 1;
[0023] Step 3, using electron beam evaporation to evaporate a mask on the photoresist mask pattern prepared in step 2, and then using Lift Off technology to obtain a patterned mask pattern;
[0024] Step 4, using wet etching technology to selectively etch silicon substrates with different crystal planes to obtain a silicon (111) plane that forms a fixed angle with the silicon surface;
[0025] Step 5, using MOCVD to grow an AlN buffer layer on the silicon surface described in step 4, and then using high-temperature MOCVD to continue growing AlN templates to obtain AlN templates with no...
specific Embodiment approach 2
[0031] Specific embodiment two, combine figure 2 , image 3 and Figure 4 This implementation mode is described. This implementation mode is an example of a method for growing a non-polar surface AIN template on a silicon substrate as described in the first specific implementation mode:
[0032] combine figure 2 , select a silicon substrate, and the silicon substrate is a silicon (110) substrate.
[0033] A photoresist mask pattern is prepared on the silicon (110) surface substrate by photolithography technology, the mask pattern is strip-shaped, the window size width is 3-10 μm, and the distance between adjacent windows is 3-10 μm.
[0034] Then utilize electron beam evaporation technology to vaporize 30~50nm tungsten on the sample surface with photoresist mask pattern, make the window place that does not have photoresist in photoresist mask pattern, tungsten is directly deposited on the silicon (110) substrate 13 ; Where the photoresist remains in the photoresist mask ...
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Abstract
The invention relates to a method for growing a non-polar surface AlN template on a silicon substrate, which relates to the technical field of semiconductors. It solves the problem that the existing non-polar GaN templates grown on silicon substrates cannot be used to grow non-polar AlGaN, especially when there are cracks and uneven surfaces on the template surface when growing AlGaN with high Al composition on GaN templates The method is as follows: select the silicon substrate; use photolithography, electron beam evaporation and Lift Off technology to obtain a patterned mask window suitable for AlN epitaxial growth; use wet etching technology to selectively etch the silicon substrate to obtain the silicon surface A silicon (111) plane forming a certain angle; an AlN buffer layer is grown by a metalorganic compound vapor deposition method (MOCVD); an AlN template is grown by a high temperature MOCVD method. The method of the invention improves the efficiency of the AlGaN optoelectronic device and provides a way.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a growth method for growing non-polar surface AlN templates on silicon substrates for obtaining high-quality AlGaN materials. Background technique [0002] GaN-based ternary alloy material AlGaN is an ideal material for making ultraviolet optoelectronic devices due to its direct wide bandgap and continuous adjustment (3.4eV~6.2eV), as well as excellent thermal and chemical stability. Communication and national defense security and other fields have great application prospects. [0003] Due to the lack of homogeneous substrates, the efficiency of AlGaN-based optoelectronic materials and devices is seriously affected. Sapphire is currently the most commonly used substrate for growing AlGaN-based optoelectronic materials and devices, but the inherent defects of sapphire, such as abnormal hardness, non-conductivity, poor thermal conductivity, and high cost, restrict the devel...
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IPC IPC(8): H01L21/02H01L21/205H01L33/00
Inventor 黎大兵孙晓娟宋航李志明陈一仁缪国庆蒋红
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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