Image sensor and manufacturing method thereof
A technology of image sensor and manufacturing method, which is applied in the direction of radiation control devices, etc., can solve the problems of poor anti-radiation ability, achieve good isolation, improve anti-radiation performance, and reduce the effect of impact
Active Publication Date: 2013-01-02
蚌埠格识知识产权运营有限公司
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[0009] The entire circuit only protects the signal readout circuit in terms of anti-radiation and anti-crosstalk, and the photodiode area has poor anti-irradiation ability due to no insulation layer isolation
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[0037] The present invention will be further described below in conjunction with specific embodiment and accompanying drawing, set forth more details in the following description so as to fully understand the present invention, but the present invention can obviously be implemented in a variety of other ways different from this description, Those skilled in the art can make similar promotions and deductions based on actual application situations without violating the connotation of the present invention, so the content of this specific embodiment should not limit the protection scope of the present invention.
[0038] image 3 It is a flowchart of an image sensor manufacturing method according to an embodiment of the present invention. As shown in the figure, the manufacturing method includes the following steps:
[0039] Step S101 is executed to provide a semiconductor substrate, which sequentially includes a top semiconductor layer, an insulating layer and a supporting subs...
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The invention provides a manufacturing method of an image sensor, which comprises the following steps of: providing a semiconductor substrate with an insulating buried layer; selecting a photosensitive diode region of the image sensor, sequentially etching a semiconductor layer on a top layer and an insulating layer till exposing the surface of a supporting substrate; carrying out ion implantation and diffusion on the exposed supporting substrate to form an isolation area and an encapsulated well in the isolation area; forming a first doping area on the well region, leaving a space for interconnection between the first doping area and the well region; and manufacturing a signal readout circuit. Accordingly, the invention also provides an image sensor; a heavy doped isolation region of thephotosensitive diode region is encircled; a deeper depletion region can be generated through the isolation area; and the isolation area increases the light absorption efficiency and meanwhile isolates an electron hole irradiated and generated in the supporting substrate and increases the anti-radiation performance of the electron hole.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices and processes, in particular, the invention relates to an image sensor with an insulating buried layer and a manufacturing method thereof. Background technique [0002] SOI (Silicon-On-Insulator, silicon on insulator) technology introduces an insulating layer between the top silicon and the silicon substrate to form a three-layer structure of "top silicon / insulating layer / silicon substrate". The top layer of silicon is usually used to make semiconductor devices, and the insulating layer in the middle is used to isolate the device from the silicon substrate. By forming the top layer of silicon on the insulator, the semiconductor device can be made into a fully depleted type, so it has the following advantages: small parasitic capacitance, high integration density, fast speed, simple process, small short channel effect and especially suitable for low voltage and low power consumption ...
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IPC IPC(8): H01L27/146
Inventor 丁毅岭汪辉陈杰田犁汪宁尚岩峰
Owner 蚌埠格识知识产权运营有限公司