Supercharge Your Innovation With Domain-Expert AI Agents!

Method for producing nano fluid pathway with large area and available size base on SU-8 photosensitive resist

A technology of SU-8 and nanofluid, which is applied in the photolithographic process of the patterned surface, the process for producing decorative surface effects, optics, etc., can solve the problem of high processing cost, increased cost and cycle, electron beam or focused particles Long beam processing time and other issues, to achieve the effect of cost

Inactive Publication Date: 2012-01-11
UNIV OF SCI & TECH OF CHINA
View PDF5 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the commonly used methods for manufacturing nanofluidic channels are mainly electron beam lithography or focused particle beam etching technology to obtain the groove structure of nanochannels, and use sacrificial layer or bonding technology to realize the bonding and sealing of nanochannels. Precise control of the nanochannel size can be achieved, but the processing time of electron beam or focused particle beam is long, the processing area is only on the order of microns, and the processing cost is high
The choice of materials is also limited to silicon and its compounds. The bonding process requires high temperature and high pressure, and the conditions are harsh, which undoubtedly increases the cost and cycle time, which is not conducive to its development in the direction of deviceization.
In recent years, the use of polymer materials for nanoimprinting combined with hot keys and technology to create nanofluidic channels has also appeared, but this method cannot achieve precise control of the size of polymer channels, so it cannot develop in the direction of mass production and deviceization.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing nano fluid pathway with large area and available size base on SU-8 photosensitive resist
  • Method for producing nano fluid pathway with large area and available size base on SU-8 photosensitive resist
  • Method for producing nano fluid pathway with large area and available size base on SU-8 photosensitive resist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Embodiment 1 is carried out by the following process:

[0030] 1. Spin-coat SU-8 photoresist 1 on the surface of the quartz sheet, and form a quartz substrate 2 after baking, such as figure 1 as shown in (A);

[0031] 2. On the embossing template 3 with grating lines, the line height is h, spin-coat the release agent on the surface of the embossing template 3 and laminate it on the quartz substrate 2, as figure 1 As shown in (B), preheating softens the SU-8 photoresist 1 on the surface of the quartz substrate 2, and applies an embossing pressure of 1Mpa to the embossing template 3, so that the embossing template 3 is pressed into the softened SU-8 photoresist 1, keep the imprint pressure for 20 minutes and then cool naturally to obtain the combination of imprint template 3, quartz substrate 2 and SU-8 photoresist 1;

[0032] 3. Carry out ultraviolet exposure to the SU-8 photoresist 1 in the combination through the light-transmitting quartz substrate 2, the exposure ...

Embodiment 2

[0035] Spin-coat SU-8 photoresist 1 on the glass surface, and form a glass substrate 21 through baking, such as figure 2 as shown in (A);

[0036] Others are the same as the specific embodiment 1.

Embodiment 3

[0038] 1. Spin-coat SU-8 photoresist 1 on the surface of the quartz sheet, and form a quartz substrate 2 after baking, such as image 3 as shown in (A);

[0039] 2. On the embossing template 3 with grating lines, the line height is h 1 , laminated on the quartz substrate 2 after spin-coating a release agent on the surface of the imprint template 3, such as image 3 as shown in (B);

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for producing nano fluid pathway with large area and available size base on SU-8 photosensitive resist, which comprises the following steps: spin coating the SU-8 photosensitive resist on a surface of a quartz sheet and a surface of glass in advanced, then curing to form a quartz substrate or a glass substrate, copying a structure of an imprint template to a fluid pathway substrate by using a nano imprinting method, depositing silicon dioxide on the fluid pathway substrate according to a certain Theta angle, when the silicon dioxide reach a certain thickness, the sealing of nano fluid pathway can be realized, so that the production for nano fluid pathway with large area and available size base on SU-8 photosensitive resist can be realized. Compared with the silicon and the other component material, the present invention realizes the development of the production materials and reduced cost, the production efficiency can be enhanced, compared with a polymer material, the control of the pathway size can be realized so that the production method is updated.

Description

technical field [0001] The invention relates to a method for manufacturing a nanofluid channel based on SU-8 photoresist, more specifically, a method for manufacturing a nanofluid channel based on SU-8 photoresist with large area and controllable size. Background technique [0002] In recent years, the basic and technical application research related to nanofluidic channels has become an attractive frontier field, which is generally defined as the cross-section of the channel for fluid flow in the size range of hundreds to several nanometers. The fluid transport in it has specific properties, which can change many physicochemical properties that dominate the macroscopic and microscale fluid transport and molecular behavior. The research based on this system not only breaks through some important concepts of traditional theories, but also some in-depth research results have important applications in many fields such as stretching manipulation of DNA molecules, drug release te...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00G03F7/00
Inventor 李小军王旭迪陈勇邱克强金建付绍军
Owner UNIV OF SCI & TECH OF CHINA
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More