Wide spectrum high reflectivity irregularly shaped distributed Brag reflector (IDBR) and manufacturing method thereof

A distributed Bragg, high reflectivity technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, gaseous chemical plating, etc., can solve the problems that have not been reported in the literature, complex process, expensive photolithography process, etc., to increase The effect of light energy capture, high reflectivity, and simple process

Inactive Publication Date: 2012-02-15
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF8 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it has almost no effect on the absorption of the main part of visible light at 300nm-650nm, and the process is quite complicated, and it uses an expensive photolithography process, which is

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wide spectrum high reflectivity irregularly shaped distributed Brag reflector (IDBR) and manufacturing method thereof
  • Wide spectrum high reflectivity irregularly shaped distributed Brag reflector (IDBR) and manufacturing method thereof
  • Wide spectrum high reflectivity irregularly shaped distributed Brag reflector (IDBR) and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] A-Si / SiO 2 Taking IDBR as an example, the present invention will be further described in conjunction with the drawings and specific embodiments. Here PairA, m=2, PairB, n=3. Other types of IDBR (such as amorphous silicon germanium / SN, amorphous silicon / SN, amorphous silicon germanium / SiO 2 ) and amorphous silicon or amorphous germanium silicon / metal Al or Ag can be obtained by similar methods. Only the process parameters of PECVD deposition of amorphous germanium silicon or SN are different from SiO 2 or amorphous silicon. This embodiment provides the steps of designing and making, such as figure 2 Shown:

[0047] The first step, based on the formula T=λ 0 / (4n), where λ 0 Indicates the central wavelength, n indicates the refractive index of a single-layer film, the selected central wavelength is 500nm and 1000nm, calculate and design the thickness of each layer of IDBR, when the central wavelength is 500nm, t SiO2 =81nm,t Si =36.5nm; when the center waveleng...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a wide spectrum high reflectivity irregularly shaped distributed Brag reflector (IDBR) and a manufacturing method thereof. The IDBR is characterized in that: through growing m pairs of DBR (distributed Brag reflector)-A multilayer films of a centre wavelength of lambda1 (lambda1= 400-700 nm) on n pairs of DBR (distributed Brag reflector)-B multilayer films of a centre wavelength of lambda2 (lambda2= 700-1300 nm), the IDBR is formed. The DBR-A or DBR-B is formed by periodically alternative combination of amorphous silicon (or amorphous germanium-silicon alpha-Ge[x]Si[1-x], x is larger than 0 and is less than or equals to 1 ) and silicide or metal (including SN, SiO[2], Ag or Al) film, thick and thin layer thicknesses T[H] and T[L] are determined by formulas T[H]= lambda[1(2)]/(4n[H]) and T[L]= lambda[1(2)]/(4n[L]) respectively, and n[L] and n[H] represent thin and thick layer refraction coefficients respectively. The IDBR in the invention can realize a high average reflectivity of more than 89% in a wide spectrum range of a wavelength of 400nm to 1270 nm, and is suitable for an ultra-thin (less than or equals to 50 micrometers) crystal silicon solar cell and an ultra-thin film solar cell.

Description

technical field [0001] The invention relates to a wide-spectrum high-reflectivity irregularly shaped distributed Bragg (Irregularly shaped Distributed Brag Reflector, hereinafter referred to as IDBR) structure and a manufacturing method thereof. The invention belongs to the field of advanced energy technology. Background technique [0002] The solar cell industry has attracted widespread attention from governments, enterprises and research institutions for its cleanliness and sustainability. Over the past ten years, the photovoltaic industry has maintained strong growth, with an average growth rate of 40%. This growth rate is expected to remain at 25-40% over the next ten years. This will undoubtedly contribute to reducing the world's dependence on fossil fuels and reducing the CO associated with thermal power generation. 2 emissions are of great benefit. Currently, solar cells based on crystalline silicon dominate the photovoltaic market with a market share of more than...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/0376H01L31/18H01L31/20C23C16/40C23C16/24
CPCY02E10/50Y02P70/50
Inventor 周健孙晓玮谈惠祖周舟周建华王伟
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap