Wide spectrum high reflectivity irregularly shaped distributed Brag reflector (IDBR) and manufacturing method thereof
A distributed Bragg, high reflectivity technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, gaseous chemical plating, etc., can solve the problems that have not been reported in the literature, complex process, expensive photolithography process, etc., to increase The effect of light energy capture, high reflectivity, and simple process
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[0046] A-Si / SiO 2 Taking IDBR as an example, the present invention will be further described in conjunction with the drawings and specific embodiments. Here PairA, m=2, PairB, n=3. Other types of IDBR (such as amorphous silicon germanium / SN, amorphous silicon / SN, amorphous silicon germanium / SiO 2 ) and amorphous silicon or amorphous germanium silicon / metal Al or Ag can be obtained by similar methods. Only the process parameters of PECVD deposition of amorphous germanium silicon or SN are different from SiO 2 or amorphous silicon. This embodiment provides the steps of designing and making, such as figure 2 Shown:
[0047] The first step, based on the formula T=λ 0 / (4n), where λ 0 Indicates the central wavelength, n indicates the refractive index of a single-layer film, the selected central wavelength is 500nm and 1000nm, calculate and design the thickness of each layer of IDBR, when the central wavelength is 500nm, t SiO2 =81nm,t Si =36.5nm; when the center waveleng...
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