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Cold ion solar-grade polycrystalline silicon material purification method and apparatus thereof

A technology of solar energy level and purification method, which is applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of limited material transportation, limited treatment effect, and low ion energy, and achieve high energy, low cost, and high ion efficiency. high density effect

Active Publication Date: 2013-05-15
TRINA SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] Glow discharge to generate cold plasma purification technology can also be processed at lower temperatures, but its ion density is low (below 10 10 ), the ion energy is small (less than 1eV), and the treatment effect is limited. In addition, its low-pressure working conditions limit its material transportation;

Method used

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  • Cold ion solar-grade polycrystalline silicon material purification method and apparatus thereof
  • Cold ion solar-grade polycrystalline silicon material purification method and apparatus thereof

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Embodiment 1

[0051] In this embodiment, the background vacuum of the system is first evacuated to 1mTorr, and then the reaction gas (Ar:H 2 : HCl=98:1:1), the gas preheating temperature is 900°C. Adjust the pressure to normal pressure, and then apply a sinusoidal AC power supply with a voltage of 4kY and a frequency of 10kHz to the system. After the discharge is stable, the silicon material to be processed is filled into the system along with the carrier gas through the feeder of the air intake and feeding device 4 . In the embodiment, the silicon powder will be heated to 900° C. along with the carrier gas, so as to facilitate the solid phase diffusion in the particles. The average particle size of the particles is 50 μm. The average residence time of particles in the device is 360s. According to the condition of the silicon material itself, multi-stage purification or repeated purification can be implemented.

Embodiment 2

[0053] This embodiment is in 10 4To implement the experimental scheme under the relatively low vacuum degree of Pa, it is necessary to further reduce the particle size of the silicon material, and the average particle size of the silicon material particle is 1 μm, otherwise the average processing time will be shortened accordingly, which cannot meet the purification requirements. Other parameters are similar to Example 1.

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Abstract

The invention relates to the technical field of solar-grade polycrystalline silicon material purification, in particular to a cold ion solar-grade polycrystalline silicon material purification method and an apparatus thereof. The apparatus comprises a cyclone, a plasma exciting power supply, a gas-charging and material-feeding device and a product collector, the method of dielectric barrier discharge is adopted as a plasma generation method in the cyclone, silicon material enters the cyclone, the average silicon powder particle processing time is controlled with silicon powder granularity, carrier gas preheating temperature and carrier gas flow velocity, the purification effect is controlled with carrier gas preheating temperature, the atmosphere variety of carrier gas and the plasma exciting power supply power of dielectric barrier discharge, the silicon material is purified in plasma constrained in the cyclone, and finally, the purified silicon material is outputted from the end of the cyclone. The invention has the advantages that: the silicon material can be purified under the condition of atmospheric pressure and nearly atmospheric pressure, the density of plasma for purification is high, the energy is high, the purification efficiency is high, and the cost is low.

Description

technical field [0001] The invention relates to the technical field of purification of solar-grade polysilicon material, in particular to a method and equipment for purifying cold-ion solar-grade polysilicon material. Background technique [0002] Crystalline silicon is currently the most widely used solar cell material, and mainstream solar-grade silicon materials are prepared by the Siemens method. In order to reduce the cost of raw materials, there are currently many ways to process low-cost silicon materials such as metallurgical silicon to make the purity close to 6N, which meets the purity requirements of silicon solar cells, which are: [0003] 1. High temperature carbon-silicon and aluminum-silicon reduction and purification technology; [0004] 2. Utilize the segregation effect of impurities during crystallization to purify metallurgical silicon; [0005] 3. Pickling purification technology; [0006] 4. Slagging purification technology; [0007] 5. Air blowing a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/037
Inventor 付少永张驰熊震王梅花
Owner TRINA SOLAR CO LTD