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Physical purification method and device of metallic silicon

A kind of equipment and fluidized bed technology, applied in the physical purification method of metal silicon and its equipment field, can solve the problems of limited treatment effect, restricted material transportation, low ion density, etc., and achieve low cost, high energy and high ion density Effect

Active Publication Date: 2012-12-19
TRINA SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] Glow discharge to produce cool plasma purification technology can also be processed at lower temperatures, but its ion density is low (below 10 10 ), the ion energy is small (less than 1eV), and the treatment effect is limited. In addition, its low-pressure working conditions limit its material transportation;

Method used

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  • Physical purification method and device of metallic silicon
  • Physical purification method and device of metallic silicon

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Embodiment 1

[0051] In this embodiment, the background vacuum of the system is first evacuated to 1mTorr, and then the carrier gas (Ar:H 2 :HCl=98:1:1), the gas preheating temperature is 900℃. Adjust the pressure to normal pressure, and then apply a sinusoidal AC power supply with a voltage of 4kV and a frequency of 10kHz to the system. After the discharge is stable, the silicon material to be treated is filled into the system through the feed system 1 along with the carrier gas. In the embodiment, the silicon material powder will be heated to 900° C. with the carrier gas to facilitate the solid phase diffusion in the particles. The average particle size of the particles is 50 μm. The average residence time of particles in the device is 1h, and multi-stage purification or repeated purification can be implemented according to the condition of the silicon material itself.

Embodiment 2

[0053] This embodiment is under relatively low degree of vacuum (10 4 Pa) To implement the experimental plan, it is necessary to further refine the particle size of the silicon material (1μm), otherwise the average processing time will be shortened accordingly. Other parameters are similar to Example 1.

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Abstract

The invention relates to the technical field of purification of solar-grade polycrystalline silicon materials, particularly a physical purification method and device of metallic silicon. The device comprises a fluidized bed, a feed system, a plasma excitation power supply and a material collection and gas circulation device. A dielectric barrier discharge method is used in the fluidized bed as a plasma generation way; the fluidized bed is used for preheating and transmitting silicon powder; the granule average treatment time is controlled by granularity of silicon powder, preheating temperature of carrier gas and flow rate of carrier gas; the purification effect is controlled by preheating temperature of carrier gas, atmosphere type of carrier gas and power of the plasma excitation power supply for dielectric barrier discharge; the silicon powder restricted into the plasma is purified in the flow process; and finally, the purified silicon material is output from the tail end of the fluidized bed. The invention can be used for purifying the silicon material under the atmospheric pressure or near-atmospheric pressure, and has the advantages of high density of ions for purification, high energy, high purification efficiency and low cost.

Description

technical field [0001] The invention relates to the technical field of purification of solar-grade polysilicon materials, in particular to a physical purification method and equipment for metal silicon. Background technique [0002] Crystalline silicon is currently the most widely used solar cell material, and mainstream solar-grade silicon materials are prepared by the Siemens method. In order to reduce the cost of raw materials, there are currently many ways to process low-cost silicon materials such as metallurgical silicon to make the purity close to 6N, which meets the purity requirements of silicon solar cells, which are: [0003] 1. High temperature carbon-silicon and aluminum-silicon reduction and purification technology; [0004] 2. Utilize the segregation effect of impurities during crystallization to purify metallurgical silicon; [0005] 3. Pickling purification technology; [0006] 4. Slagging purification technology; [0007] 5. Air blowing and evaporation ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/037
Inventor 付少永张驰熊震王梅花黄振飞
Owner TRINA SOLAR CO LTD