Plasma display panel and manufacturing method thereof
A technology of a plasma display screen and a manufacturing method, which is applied to the field of plasma display screen and manufacturing, can solve the problems of increasing the number of lines, reducing the discharge space, and failing to meet the quality requirements of the full high-definition PDP display screen.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2012-03-07
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to the field of plasma display screens, in particular to a plasma display screen and a manufacturing method. Background technique
[0002] Common AC gas discharge plasma display screens all adopt a surface discharge structure, which includes an upper substrate and a lower substrate sealed together with it. A transparent electrode ITO and a bus electrode are arranged on the upper substrate, and the transparent electrode and the bus electrode constitute a discharge electrode. The discharge electrode is further divided into a sustain discharge electrode X and a scan discharge electrode Y. The surface of the discharge electrode is covered with a dielectric layer, and the dielectric layer is covered with a protective layer. The protective layer is usually a magnesium oxide film. Addressing electrodes perpendicular to the discharge electrodes are arranged on the lower substrate, and a layer of dielectric layer is covered on the address...
Examples
Embodiment 1
[0040] Embodiment 1 technological step
[0041] The pre-order steps are the same as those of the prior art, and the process steps for forming the second protective layer: firstly, vacuum the chamber so that the degree of vacuum is 1.9×10 -4 Pa, the temperature was raised to 290°C while evacuating; after that, oxygen was passed into the chamber to reduce the vacuum to 2.8×10 -2 Pa, and then steam to reduce the vacuum to 5.1×10 -2 Pa; keep the moving speed of the substrate at 420 mm / sec during evaporation; finally control the thickness of the second protective layer to be 3700 angstroms.
Embodiment 2
[0042] Embodiment 2 technological steps
[0043] The steps are the same as in Example 1, the difference is: first vacuumize the chamber so that the degree of vacuum is 5.0×10 -4 Pa, the temperature was raised to 300°C while evacuating.
Embodiment 3
[0044] Embodiment 3 technological steps
[0045] The steps are the same as in Example 1, the difference is: first vacuumize the chamber so that the degree of vacuum is 7.6 × 10 -4 Pa, the temperature was raised to 310°C while evacuating.