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Microwave dielectric ceramic substrate material sintered at low temperature and preparation thereof

A technology of microwave dielectric ceramics and low-temperature sintering, which is applied in the field of electronic ceramics and its preparation, can solve problems such as the decline of microwave dielectric properties, the increase of manufacturing cost and cycle, and the complexity of the process, so as to achieve good microwave performance, small dielectric loss, The effect of simple chemical composition and preparation process

Active Publication Date: 2013-08-14
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when adding sintering aids, it is generally easy to cause a decrease in microwave dielectric properties, while chemical synthesis and the use of ultrafine powder as raw materials lead to complex processes, and increased manufacturing costs and cycles.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The raw materials ZnO and H will be analyzed for purity 3 BO 3 Prepare the main powder according to x=0.5, then fully mix the main powder and ball mill for 4 hours, after drying, sieving, and briquetting, pre-fire at 800°C for 4 hours, and then pulverize the pre-fired block sample Then carry out the second ball mill for 5 hours, grind and dry, then granulate, and pass through double-layer sieving of 60 mesh and 120 mesh sieve to get the required ceramic material. The ceramic material is pressed into shape (sheet or column) as required, and then sintered in air at 950°C for 6-8 hours to form porcelain, and the low-temperature sintered microwave dielectric ceramic substrate material can be obtained.

[0027] The performance of this group of ceramic materials reaches the following indicators:

[0028] Sintered into porcelain at 950℃ in air, the dielectric properties under microwave εr~5.7(11.89GHz), the quality factor Q~1200, Qf~14,298GHz, the resonant frequency temperat...

Embodiment 2

[0030] The raw materials ZnO and H will be analyzed for purity 3 BO 3 Prepare the main powder according to x=0.5, then fully mix the main powder and ball mill for 4 hours, after drying, sieving, and briquetting, pre-fire at 800°C for 4 hours, and then pulverize the pre-fired block sample Carry out secondary ball milling again 5 hours, add the ZnB that weight percent is 4% after drying 2 o 4The glass phase is fully mixed and ball milled for 4 hours, dried, granulated, and sieved through double-layer sieves of 60 mesh and 120 mesh to obtain the desired ceramic material. The ceramic material is pressed into shape (sheet or column) as required, and then sintered in air at 925°C for 4-6 hours to form porcelain, and the low-temperature sintered microwave dielectric ceramic substrate material can be obtained.

[0031] The performance of this group of ceramic materials reaches the following indicators:

[0032] Sintered into porcelain in air at 925°C, dielectric properties ε under...

Embodiment 3

[0034] The raw materials ZnO and H will be analyzed for purity 3 BO 3 Prepare the main powder according to x=0.57, then fully mix the main powder and ball mill for 4 hours, dry, sieve, and briquetting, pre-fire at 800°C for 4 hours, and then pulverize the pre-fired block sample Then carry out the second ball mill for 5 hours, grind and dry, then granulate, and pass through double-layer sieving of 60 mesh and 120 mesh sieve to get the required ceramic material. The ceramic material is pressed into shape (sheet or column) as required, and then sintered in air at 900°C for 4-6 hours to form porcelain, and the low-temperature sintered microwave dielectric ceramic substrate material can be obtained.

[0035] The performance of this group of ceramic materials reaches the following indicators:

[0036] Sintered into porcelain at 900°C in air, dielectric properties ε under microwave r ~6.5 (11.97GHz), quality factor Q~1970, Qf~23,543GHz, resonant frequency temperature coefficient T...

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PUM

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Abstract

The invention discloses a microwave dielectric ceramic substrate material sintered at low temperature and a preparation method thereof. The microwave dielectric ceramic substrate material sintered at low temperature has a structural expression as follows: xZnO-(1-x)B2O3, wherein x=0.5-0.75. A solid-phase synthresis process is adopted for preparing powder, the presintering temperature is 750-800 DEG C, and the sintering temperature is 850-960 DEG C. The substrate material disclosed by the invention has the following characteristics of lower dielectric constant, less dielectric loss low sintering temperature, capability of being cofired with Ag or Cu electrodes, simple preparation process and the like, and can be used for preparing low-temperature cofired ceramic (LTCC) substrates.

Description

technical field [0001] The invention belongs to the field of electronic ceramics and its preparation, in particular to a microwave dielectric ceramic substrate material sintered at low temperature and its preparation. Background technique [0002] The electronic substrate is the carrier of the semiconductor chip package, carrying the support of electronic components and forming the base of the electronic circuit. Traditional inorganic substrates are mainly made of Al 2 o 3 , SiC and AlN are used as substrates, which have excellent characteristics in terms of thermal conductivity, flexural strength, thermal expansion coefficient, etc., but the sintering temperature of these materials is basically above 1500 ° C. If the method of co-firing is adopted, the conductor material Only refractory metals such as W and Mo can be selected, which greatly increases the cost, and the emergence of low-temperature co-fired ceramic (LTCC) materials has opened up a new way out for this. [...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453C04B35/622C04B35/01
Inventor 汪宏吴新光周迪代伟陈月花曾一
Owner XI AN JIAOTONG UNIV