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Preparing method of high-conductivity front electrode of thin film solar cell

A thin-film solar cell and high-conductivity technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as poor conductivity, affecting battery fill factor and open circuit voltage, affecting battery conversion efficiency, etc., to achieve good conductivity, Photoelectric conversion efficiency improvement, the effect of improving conversion efficiency

Active Publication Date: 2012-03-28
北京远大信达科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current thin-film solar cells mainly use TCO film as the front electrode, and its light transmittance can meet the requirements, but its conductivity is poor, which affects the fill factor and open circuit voltage of the cell, thereby affecting the conversion efficiency of the cell.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Embodiment 1, the glass substrate is ultra-clear glass, the glass substrate is cleaned first, and the front electrode is deposited on the cleaned ultra-clear glass by physical vapor deposition. The process is: the background vacuum is less than 2×10 -5 Under the condition of Pa, argon gas is introduced, the substrate temperature is about 300°C, the pressure is 1Pa, and the power density is 3W / cm 2 , using ceramic target ZnO / Al 2 o 3 An AZO film layer with a thickness of 600nm was deposited, and then etched with 0.5% dilute hydrochloric acid to obtain an AZO film layer with a thickness of 400nm.

[0013] Deposit an Al film with a thickness of 2nm by PVD: the deposition condition is a power density of 20W / cm 2 , pressure 1Pa, target base distance 5cm. The square resistance of the prepared front electrode is 10Ω / □, and the light transmittance is 81% in the range of 300-1100nm.

Embodiment 2

[0014] Embodiment 2: The glass substrate is ultra-clear glass. Firstly, the glass substrate is cleaned, and the cleaned ultra-clear glass is deposited with the front electrode by physical vapor deposition. The process is as follows: the background vacuum is less than 2×10 -5 Under the condition of Pa, argon gas is introduced, the substrate temperature is about 300°C, the pressure is 1Pa, and the power density is 3W / cm 2 , using ceramic target ZnO / Al 2 o 3 An AZO film layer with a thickness of 800 nm was deposited, and then etched with 0.5% dilute hydrochloric acid to obtain an AZO film layer with a thickness of 600 nm.

[0015] An Al film layer with a thickness of 0.5 nm is deposited by PVD. The deposition condition is power density 5W / cm 2 , a pressure of 2Pa, and a target base distance of 5cm, the sheet resistance of the prepared front electrode is 10Ω / □, and the light transmittance is 82% in the range of 300-1100nm.

Embodiment 3

[0016] Example 3: The glass substrate is made of tin oxide doped with fluorine (FTO) glass, and the thickness of the FTO layer is 700nm; an Ag film layer with a thickness of 2nm is deposited by PVD, and the deposition condition is a power density of 10W / cm 2 , pressure 1.5Pa, target base distance 6cm, the prepared front electrode sheet resistance is 9Ω / □. In the range of 300-1100nm, the light transmittance is 80%.

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Abstract

The invention discloses a preparing method of a high-conductivity front electrode of a thin film solar cell, and an ultrathin metal film layer is deposited on a TCO film layer which is deposited on a glass base plate so as to achieve the aims of excellent ohmic contact with a solar cell structure layer and good conductivity. The composite front electrode of the thin film solar cell prepared by the method has better conductivity, forms good ohmic contact with the solar cell structure layer, and can not influence filling factors and open-circuit voltage of the cell, thus improving the conversion efficiency of the thin film solar cell. The light transmission of the electrode meets the requirement, so that the photoelectric conversion efficiency of the thin film solar cell can be improved by 0.3-0.5%.

Description

technical field [0001] The invention relates to a preparation method of a thin film solar cell, in particular to a preparation method of a front electrode of a thin film solar cell. Background technique [0002] Solar energy is a clean energy, with high energy, clean and pollution-free, inexhaustible and other advantages that petrochemical energy cannot match. In today's increasingly serious energy crisis, it has received widespread attention from all over the world. The photovoltaic power generation market is currently dominated by crystalline silicon solar cells. Although thin-film cells have the advantages of short energy return period and environmental friendliness, their power generation efficiency is relatively low compared with crystalline silicon cells, which has become an important factor restricting the development of thin-film cells. . The current thin-film solar cells mainly use TCO film as the front electrode. Its light transmittance can meet the requirements,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 何欣炎王国增李鹏林宏达王恩忠
Owner 北京远大信达科技有限公司
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