Electrophoretic deposition preparation method for V2O5 film

A technology of electrophoretic deposition and V2O5, which is applied in the direction of electrophoretic plating, electrolytic coating, coating, etc., can solve the problems of complex preparation process and unstable film, and achieve the effect of simple process, dense and uniform structure, and stable performance

Active Publication Date: 2012-04-04
昆明理工大学设计研究院有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the invention is to solve V in the prior art 2 o 5 The preparation process of thin film is complex, V 2 o 5 thin film instability problem, through the V 2 o 5 Perform electrophoretic deposition to obtain uniform and dense V on the substrate 2 o 5 film, meanwhile, increases V 2 o 5 The controllability of the thin film, thus, provides a V 2 o 5 Film Preparation Method

Method used

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  • Electrophoretic deposition preparation method for V2O5 film
  • Electrophoretic deposition preparation method for V2O5 film
  • Electrophoretic deposition preparation method for V2O5 film

Examples

Experimental program
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Effect test

Embodiment 1

[0028] (1) To analyze pure V 2 o 5 As raw material, the concentration is 25wt% H 2 o 2 For the reaction solvent, according to V 2 o 5 :H 2 o 2 =1g:50mL of the solution configured in the ratio, and then under the condition of keeping the temperature at -2oC all the time, using electromagnetic stirring at a stirring rate of 3 rev / s, to H 2 o 2 Add 0.05 g of V every 20 seconds to the solvent 2 o 5 powder, the solution is light yellow, with V 2 o 5 Add the powder while stirring continuously, the color of the solution gradually becomes darker until it is a reddish-brown solution, and then stir for 10 minutes to obtain a transparent solution without precipitation; then put it on an ultrasonic cleaner, use 80KHz ultrasonic waves to continue stirring, Keep the temperature at -2 oC to promote grain refinement and make the solution more uniform. After stirring for 10 minutes, the precursor solution is obtained after filtration. The prepared precursor solution is sealed and st...

Embodiment 2

[0032] (1) To analyze pure V 2 o 5 As raw material, the concentration is 20wt% H 2 o 2 For the reaction solvent, according to V 2 o 5 :H 2 o 2 =0.6g:30mL ratio configuration solution, then under the condition that the temperature is kept at 0oC all the time, using electromagnetic stirring at a stirring rate of 1 rev / s, to H 2 o 2 Add 0.1 g of V every 30 seconds to the solvent 2 o 5 powder, the solution is light yellow, with V 2 o 5 Add the powder while stirring continuously, the color of the solution gradually becomes darker until it is a reddish-brown solution, and then stir for 20 minutes to obtain a transparent solution without precipitation; then put it on an ultrasonic cleaner, use 20KHz ultrasonic waves to continue stirring, Keep the temperature at 0oC to promote grain refinement and make the solution mix more evenly. After stirring for 15 minutes, the precursor solution is obtained after filtration, and the prepared precursor solution is sealed and stored at ...

Embodiment 3

[0036] (1) To analyze pure V 2 o 5 As raw material, the concentration is 40wt% H 2 o 2 For the reaction solvent, according to V 2 o 5 :H 2 o 2 =1.5g:90mL ratio configuration solution, then under the condition that the temperature is kept at 1oC all the time, using electromagnetic stirring at a stirring rate of 5 rev / s, to H 2 o 2 Add 0.08 g of V every 40 sec to the solvent 2 o 5 powder, the solution is light yellow, with V 2 o 5 Add the powder while stirring continuously, the color of the solution gradually becomes darker until it is a reddish-brown solution, and then stir for 30 minutes to obtain a transparent solution without precipitation; then put it on an ultrasonic cleaner, use 100KHz ultrasonic waves to continue stirring, Keep the temperature at 1oC to promote grain refinement and make the solution mix more evenly. After stirring for 30 minutes, the precursor solution is obtained after filtration, and the prepared precursor solution is sealed and stored at 1o...

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Abstract

The invention relates to an electrophoretic deposition preparation method for a V2O5 film, and belongs to the technical field of functional film preparation and performance. V2O5 is used as a raw material and H2O2 is used as a reaction solvent in the method. The method comprises the following steps of: mixing 0.6 to 1.5 grams of pure V2O5 and 30 to 90 milliliters of 20 to 40 weight percent H2O2 solution, preparing V2O5 sol in an electromagnetic-ultrasonic mixed stirring manner, depositing a V2O5 film on a piece of indium tin oxide (ITO) conductive glass by an electrophoretic deposition method, performing thermal treatment on the film, and thus obtaining a laminar V2O5 film. By the method, a surfactant or a catalyst and high temperature or high pressure are not needed. The invention has the advantages that: the method is easy to operate, the cost is low and the formed V2O5 film structure is quite compact.

Description

technical field [0001] The present invention relates to a V 2 o 5 The invention relates to a method for preparing a film by electrophoretic deposition, which belongs to the technical field of functional film preparation and performance. Background technique [0002] V 2 o 5 It has a stable structure and is an important transition metal oxide with a good layered structure and only weak interactions between layers. In recent years, with the upsurge of functional materials research and the development of nanotechnology, V 2 o 5 The study of the V 2 o 5 Exhibit unique electronic, ionic and physicochemical properties, and different experimental methods and prepared V on different substrates 2 o 5 Thin films have significant differences in their electrical and optical properties. Therefore, they have attracted great attention in lithium-ion secondary battery cathode materials, smart windows, thermal radiation detection materials, sensors, electrochromic display ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D13/02
Inventor 詹肇麟彭雁张卫伟张晓娟李莉刘建雄刘忠
Owner 昆明理工大学设计研究院有限公司
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