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AlZnO ultraviolet photoelectric cathode material and ultraviolet vacuum image intensifier

A cathode material, image intensifier technology, applied to conductive materials dispersed in non-conductive inorganic materials, cathode ray tubes/electron beam tubes, circuits, etc., can solve the problem of inability to implement technical solutions, doping, and no specific disclosure of ZnO Material performance requirements and other issues, to achieve the effects of good ultraviolet photoemission performance, simple preparation method and low cost

Inactive Publication Date: 2012-04-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
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  • Application Information

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Problems solved by technology

Sichuan Tianwei Electronics Co., Ltd. applied for a patent "a photocathode and the preparation process of a vacuum ultraviolet photoelectric device using the cathode (application number: CN200610022021.9)", although the patent application mentioned that ZnO material is used for image tube cathode and conductive electrodes, but did not specifically disclose the performance requirements of the ZnO material and whether it is doped or not, making it impossible for those skilled in the art to implement the patented technical solution

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  • AlZnO ultraviolet photoelectric cathode material and ultraviolet vacuum image intensifier
  • AlZnO ultraviolet photoelectric cathode material and ultraviolet vacuum image intensifier
  • AlZnO ultraviolet photoelectric cathode material and ultraviolet vacuum image intensifier

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Embodiment Construction

[0017] The substrate is a quartz substrate with a diameter of 30mm. After the substrate is cleaned and pretreated, an Al substrate with a thickness of about 2000nm is prepared on it. x Zn 1-x o 1+0.5x (x ≤ 0.02) thin film as the bottom electrode; then induce the growth of Al with a thickness of about 300nm on the bottom electrode x Zn 1-x o 1+0.5x (0.2≤x≤0.7) alloy film layer to obtain a transmission type ultraviolet photocathode material.

[0018] Put the above-mentioned transmission type ultraviolet photocathode material and anode material in a vacuum degree of 5.0×10 -5 Packaged under pa condition as image 3 The UV image intensifier without MCP amplification is shown, and the photoemission current of the device is tested under the condition of no MCP amplification, that is, the anode response current is collected in the form of a diode, and the voltage applied between the cathode and the anode is determined by Tianjin The Dongwen high-voltage voltage source (DW-M202-...

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Abstract

The invention discloses an AlZnO ultraviolet photoelectric cathode material and an ultraviolet vacuum image intensifier, which belong to the technical field of electronic material and device. High conductivity AlyZn1-yO1+0.5y (y<=0.02) film deposited on uviol substrate base sheet is used as a transparent bottom electrode, and AlxZn1-xO1+0.5x (0.2<=x<=0.7) alloy film material induced to grow on the transparent bottom electrode is used as the ultraviolet photoelectric cathode material; the ultraviolet photoelectric cathode material is sensitive to ultraviolet rays; optical absorption edges can be bluely shifted to be within 300nm by strictly controlling material components, thereby meeting requirements of detecting solar blind region of ultraviolet rays; and the ultraviolet photoelectric cathode material is simple to prepare, low in cost, non-toxic and environment-friendly. The invention also provides an ultraviolet vacuum image intensifier, which takes the AlZnO ultraviolet photoelectric cathode material as cathode, has good ultraviolet photoelectric emission performance, and can meet ultraviolet detection and realize detection requirements of ultraviolet solar blind region.

Description

technical field [0001] The invention belongs to the technical field of electronic materials and components, and relates to a wide-bandgap semiconductor conductive film and an ultraviolet photocathode material, specifically referring to x Zn 1-x o 1+0.5x (AlZnO) The atomic ratio of each component of the ternary alloy material is within a certain range, and the Al y Zn 1-y o 1+0.5y (y≤0.02) transparent conductive film and Al with ultraviolet photoemission properties x Zn 1-x O (0.2≤x≤0.7) cathode thin film, the composite layer material system composed of these two thin films can be applied in the transmission vacuum photodetection device, and realize the functions of the bottom electrode and the ultraviolet photocathode respectively. technical background [0002] Ultraviolet detection technology is another dual-use photoelectric detection technology developed after infrared and laser detection technology. Because ozone has a strong absorption effect on ultraviolet radia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/20H01B1/22H01J31/50H01J29/04
Inventor 邓宏韦敏邓雪然
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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