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Gallium element doping device and method for Czochralski silicon

A technology of element doping and Czochralski silicon, which is applied in the field of doping devices, can solve the problems of difficulty, difficult secondary doping, high cost, etc., to reduce the temperature stabilization time, make the doping device simple and practical, and improve production efficiency effect

Inactive Publication Date: 2014-03-26
ZHEJIANG COWIN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Patent 200810053398.X "Production method of gallium-doped solar silicon single crystal" uses equipment transformation for doping, which is costly and difficult to perform secondary supplementary doping in the production process
Patent 201010132399.0 "Czochralski silicon single crystal gallium doping method and the doping device used" uses a single crystal silicon container to hold dopants, and at the same time, it is necessary to accurately control the melt temperature after doping to achieve non-uniform formation. core, seal the bottom of the container, otherwise it will not be able to achieve secondary use, which is difficult in actual operation

Method used

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  • Gallium element doping device and method for Czochralski silicon
  • Gallium element doping device and method for Czochralski silicon
  • Gallium element doping device and method for Czochralski silicon

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Embodiment 1

[0038] Embodiment 1, the method of using the device: ① After the polysilicon in the single crystal furnace is completely melted; ② Use the gate valve of the single crystal furnace to isolate the auxiliary room of the main room; ③ Open the auxiliary room, remove the seed crystal, and install the device. During the whole process, pay attention to ensure cleanliness and prevent contamination; ④Put gallium metal into the doping cup; ⑤Clean the sub-chamber and connect it to the main chamber and sub-chamber, lower the doping device and enter the liquid surface 8mm; , the dopant completely flows into the melt; ⑦lift the device, the doped hole is re-sealed by the adsorbed molten silicon, and the device is lifted into the auxiliary chamber; ⑧The gate valve isolates the main chamber and the auxiliary chamber, and the auxiliary chamber Inflate the chamber to normal pressure, open the door of the auxiliary chamber, and after cooling for a certain period of time, remove the device, reinstal...

Embodiment 2

[0039]Example 2, the equipment is a TDR-80 single crystal furnace, the initial polysilicon feeding amount is 60Kg, the crystal diameter is 170 mm, the target resistivity is 2 ohm cm, and 300 mg of gallium metal is weighed, and the doping device is used for doping. The specific implementation is as follows Example 1 is carried out, and the total time of the whole doping process is 35min. After the melt is stable, place a suitable crucible for the steps of seeding, laying shoulders, turning shoulders, equal diameter, and finishing. About 2.15 ohm cm, tail resistivity 0.96 ohm cm. It basically meets the requirements of the target resistivity of the head, and the deviation from the target resistance is only 7.5%.

Embodiment 3

[0040] Example 3, secondary supplementary doping of solar energy, due to equipment reasons or process control reasons, the primary isocrystalline length is 326 mm, and the secondary isomorphic diameter is 180 mm. Due to the loss of dislocation-free growth state, the high temperature remelts twice, and the total weight of the lifting shoulder is 1.2kg. In order to ensure that the resistivity of the crystal is within the target resistivity of 2.1 ohm cm, the doping concentration of the melt is recalculated and 70 mg of dopant is added. Use the above gallium-doped device, and perform supplementary doping according to the method of Example 1. After the doping is completed, the crystal is grown according to the normal process, with an equal diameter of 1000mm, and the head and tail samples are taken for resistivity testing, and the target resistivity deviation is less than 5%.

[0041] The main principle of the present invention is as follows: the present invention utilizes the su...

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Abstract

The invention discloses a gallium element doping device for Czochralski silicon. The device comprises a doping cup with a bottom doping hole, wherein the doping cup is provided with a suspension structure; the suspension structure is provided with a suspension rod which is matched with a pulling collet; the doping cup is made of a material which has a higher melting point than silicon and does not react with molten silicon easily; and the doping hole is filled with cured molten silicon. The invention further provides a gallium element doping device for Czochralski silicon for using the doping device. Before use, molten silicon is used for sealing the doping hole at the bottom of the doping cup; and during use, the doping cup is lowered to 3-8 millimeters below the liquid level for immersing the doping hole, and gallium elements flow towards the molten silicon along the doping hole after silicon sealing the doping hole is molten. The gallium element doping device disclosed by the invention can be used repeatedly; the doping cup is enclosed by making full use of the characteristics of molten silicon and the temperature distribution characteristic in a single crystal furnace after doping is realized and can be used repeatedly; and the gallium element doping device has the advantage of low cost.

Description

technical field [0001] The invention belongs to the field of element doping for growth of semiconductor materials, and particularly relates to a gallium element doping method and a doping device for Czochralski method silicon single crystal growth, which is suitable for gallium element doping of Czochralski method single crystal silicon, and can effectively Enable doping and increase production efficiency. Background technique [0002] Gallium-doped silicon single crystals are often used in the manufacture of epitaxial substrates and high-efficiency and low-attenuation solar cells. In particular, gallium-doped silicon monocrystalline solar cells can effectively reduce the light-induced attenuation effect and improve photoelectric conversion efficiency, which has attracted widespread attention. Solar cells made of gallium-doped silicon single crystals have superior conversion efficiency and service life. Performance, so it has an irreplaceable advantage in high-efficiency so...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/04C30B29/06
Inventor 孙新利郭兵健黄笑容何国君徐一俊
Owner ZHEJIANG COWIN ELECTRONICS
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