White light-emitting diode (LED) epitaxial structure and manufacturing method thereof, and white LED chip structure
A technology of LED chip and epitaxial structure, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems of poor color rendering, blue light spots, and scattering and absorption of white light LEDs
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[0028] Such as figure 1 As shown, a white light LED epitaxial structure includes an epitaxial wafer, and the epitaxial wafer includes a ZnS substrate 1, a GaN transition layer 2, a first N-GaN contact layer 3, a Si- and Zn-doped In 0.2 Ga 0.8 N / GaN multi-quantum well light-emitting layer 4, first P-GaN contact layer 5, N-GaN cascade layer 6, second N-GaN contact layer 7, In doped with Si and Zn 0.49 Ga 0.51 N / GaN multi-quantum well light-emitting layer 8 and the second P-GaN contact layer 9 . The ZnS substrate is a nanoscale material with wide energy band gap, high refractive index and high light transmittance, and has excellent fluorescence effect and electroluminescence function.
[0029] Wherein, the thickness of the ZnS substrate 1 is 50-200um, preferably 100um.
[0030] Wherein, the thickness of the GaN transition layer 2 is 10-100 nm, preferably 50 nm.
[0031] Wherein, the thicknesses of the first N-GaN contact layer 3 and the second N-GaN contact layer 7 are both...
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