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White light-emitting diode (LED) epitaxial structure and manufacturing method thereof, and white LED chip structure

A technology of LED chip and epitaxial structure, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems of poor color rendering, blue light spots, and scattering and absorption of white light LEDs

Active Publication Date: 2012-04-11
WEIFANG GUANGSHENG NEW ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, blue light LEDs are usually used to excite non-transparent yellow phosphor powder to produce white light LEDs through wavelength conversion. Since the continuous lighting of blue light LEDs will cause temperature rise and wavelength conversion materials will degrade, when the light emitted by blue light chips passes through yellow phosphor powder Phenomena such as scattering and absorption will occur, so that the light extraction efficiency is not high. At the same time, due to the uneven coating thickness of the yellow phosphor powder, it will also cause problems such as yellow apertures, blue spots, and inconsistent color temperature of white light. The white light LED produced by powder has poor color rendering and poor stability

Method used

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  • White light-emitting diode (LED) epitaxial structure and manufacturing method thereof, and white LED chip structure
  • White light-emitting diode (LED) epitaxial structure and manufacturing method thereof, and white LED chip structure
  • White light-emitting diode (LED) epitaxial structure and manufacturing method thereof, and white LED chip structure

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Embodiment Construction

[0028] Such as figure 1 As shown, a white light LED epitaxial structure includes an epitaxial wafer, and the epitaxial wafer includes a ZnS substrate 1, a GaN transition layer 2, a first N-GaN contact layer 3, a Si- and Zn-doped In 0.2 Ga 0.8 N / GaN multi-quantum well light-emitting layer 4, first P-GaN contact layer 5, N-GaN cascade layer 6, second N-GaN contact layer 7, In doped with Si and Zn 0.49 Ga 0.51 N / GaN multi-quantum well light-emitting layer 8 and the second P-GaN contact layer 9 . The ZnS substrate is a nanoscale material with wide energy band gap, high refractive index and high light transmittance, and has excellent fluorescence effect and electroluminescence function.

[0029] Wherein, the thickness of the ZnS substrate 1 is 50-200um, preferably 100um.

[0030] Wherein, the thickness of the GaN transition layer 2 is 10-100 nm, preferably 50 nm.

[0031] Wherein, the thicknesses of the first N-GaN contact layer 3 and the second N-GaN contact layer 7 are both...

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Abstract

The invention discloses a white light-emitting diode (LED) epitaxial structure and a manufacturing method thereof, and a white LED chip structure with the epitaxial structure. An epitaxial slice of the epitaxial structure sequentially comprises a ZnS substrate, a GaN transition layer, a first N-GaN contact layer, a Si and Zn doped In0.2Ga0.8N / GaN multi-quantum well light-emitting layer, a first P-GaN contact layer, a N-GaN cascade layer, a second N-GaN contact layer, a Si and Zn doped In0.49Ga0.51N / GaN multi-quantum well light-emitting layer and a second P-GaN contact layer form bottom to top. Fluorescent powder is not needed to be coated on the white LED epitaxial structure and the chip structure, so the epitaxial structure and the chip structure are radically free from the fluorescent powder, and the epitaxial structure and the chip structure are high in light emitting quality and color rendering, work stability is improved and service life is prolonged, packaging processes are reduced, production processes from packaging of the white LED epitaxial structure and the white LED chip to application of the white LED epitaxial structure and the white LED chip to the whole industrial chain can be simplified, production efficiency is high and the epitaxial structure and the chip structure are suitable for large-scale production.

Description

technical field [0001] The invention relates to the technical field of semiconductor lighting, in particular to an epitaxial structure and a manufacturing method of a white LED and a white LED chip structure including the epitaxial structure. Background technique [0002] White light LED has many advantages such as energy saving, environmental protection, long life, and can work at high speed. Its application is becoming wider and wider, and the government is vigorously promoting it. At present, blue light LEDs are usually used to excite non-transparent yellow phosphor powder to produce white light LEDs through wavelength conversion. Since the continuous lighting of blue light LEDs will cause temperature rise and wavelength conversion materials will degrade, when the light emitted by blue light chips passes through yellow phosphor powder Phenomena such as scattering and absorption will occur, so that the light extraction efficiency is not high. At the same time, due to the u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/04H01L33/32
Inventor 李玉芝吉爱华祝菡菡
Owner WEIFANG GUANGSHENG NEW ENERGY
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