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LED (light-emitting diode) of thin film structure

A technology of light emitting diodes and thin film structures, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of difficult to control the firmness of bonding conductive support substrates, complicated manufacturing processes, unfavorable yields, etc., to increase the bonding firmness The effect of increasing the thermal diffusion area and improving the yield rate

Inactive Publication Date: 2014-04-30
EPILIGHT TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this traditional vertical structure is conducive to the heat dissipation of high-power LEDs, its manufacturing process is often complicated, and the firmness of the bonded conductive support substrate is also difficult to control, which is not conducive to the improvement of yield in production.

Method used

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  • LED (light-emitting diode) of thin film structure
  • LED (light-emitting diode) of thin film structure
  • LED (light-emitting diode) of thin film structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Please see Figure 2-4 , this embodiment uses a common Si substrate 14 as the bonding substrate.

[0031] figure 2 It is a schematic cross-sectional structure diagram of an epitaxial wafer, which is grown on a growth substrate 1 (such as a sapphire substrate), and includes an N-type semiconductor layer 2 , an active layer 3 and a P-type semiconductor layer 4 . A transparent conductive layer 5 and a reflective layer 6 are disposed on the P-type semiconductor layer 4 , and a first bonding metal layer 7 is disposed on the reflective layer 6 .

[0032] Among them, the N-type semiconductor layer 2 is preferably an N-type gallium nitride-based layer, and the P-type semiconductor layer 4 is preferably a P-type gallium nitride-based material layer, but not limited thereto. The gallium nitride-based material can be Ga, In, Binary, ternary, and quaternary compounds or mixtures of Al and N, such as GaN, AlGaN, GaInN, AlGaInN, etc. The active layer 3 is preferably a multi-quant...

Embodiment 2

[0041] Please see Figure 5 , this embodiment adopts basically the same technical scheme as Embodiment 1, the difference is that this embodiment uses a ceramic substrate 15 as a bonding substrate, because Cu metal (through-hole metal plug 13) and ceramic substrate 15 There is no diffusion of Cu to Si, so there is no need to make SiO 2 The second insulating protective layer of the material and the metal diffusion barrier layer of the TiN material are used for protection, so that the structure can be simpler.

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Abstract

The invention discloses an LED (light-emitting diode) of a thin film structure. The LED comprises an epitaxial wafer, a bonded substrate and through-hole metal studs, wherein, a first bonded metal layer is arranged on a P-type semiconductor layer of the epitaxial wafer; a concave hole extending to an N-type semiconductor layer is arranged on the epitaxial wafer, and an N electrode is arranged on the surface of the N-type semiconductor layer in the concave hole; the surface of the epitaxial wafer is wrapped with a protection film, and only the first bonded metal layer and the N electrode are exposed; the bonded substrate is provided with a through hole corresponding to the concave hole as well as a second bonded metal layer matched with the first bonded metal layer; the epitaxial wafer is butted with the bonded substrate in a bonding manner; the through-hole metal studs are positioned in the through hole and the concave hole and are in contact with the N electrode to lead out the electrode; and the first bonded metal layer or the second bonded metal layer is led out to be taken as a P electrode. The LED of the thin film structure has the advantages that the chip bonding firmness is strengthened, the heat dissipation area is increased, the thermal resistance is lowered, and current injection is improved; and the N electrode is arranged at the back side of a light emission surface so as to improve the luminous efficiency of the LED.

Description

technical field [0001] The invention relates to a chip structure of a light emitting diode, in particular to a light emitting diode with a thin film structure. Background technique [0002] Light-emitting diodes have the advantages of small size, high efficiency and long life, and are widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power light-emitting diodes may realize semiconductor solid-state lighting, which has caused a revolution in the history of human lighting, and has gradually become a research hotspot in the field of electronics. The light extraction efficiency of LED refers to the ratio of the available photons incident to the device and the photons generated by electron-hole recombination in the active area of ​​the epitaxial wafer. In traditional LED devices, due to factors such as substrate absorption, electrode blocking, and total reflection of the light-emitting surface, the light extraction eff...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/38H01L33/64
Inventor 郝茂盛黎敏张楠朱广敏陈诚齐胜利
Owner EPILIGHT TECH