Film transistor and production method thereof
A thin-film transistor and thin-film technology, which is applied in the fields of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as operation and detection limitations, and achieve the effects of simple production, good application prospects, and low production costs.
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Embodiment 1
[0027] This embodiment provides a thin film transistor, such as figure 1 and figure 2 As shown, the gate 1 of the thin film transistor is an aluminum wire with a columnar structure, and its cross section is circular, as shown in figure 2 As shown, but the cross-section is not limited to a circle, it can also be a shape with a symmetrical structure such as a triangle, a square, a rectangle, and a rhombus, and the length is 10 mm to 50 mm. The gate dielectric layer 2 is a hafnium oxide (HfO2) film, and the conductive channel Layer 3 is an indium zinc oxide (IZO) film, the source electrode 4 and the drain electrode 5 are respectively Ti electrodes, and the central axis of the aluminum wire of the gate 1 parallel to the length direction is the axis, and one end of the gate 1 is used as a gate contact Except for some parts, the periphery of the remaining part of the gate 1 is covered with the gate dielectric layer 2, and the periphery of the gate dielectric layer 2 is covered wi...
Embodiment 2
[0036] This embodiment provides a thin film transistor. The gate of the thin film transistor is a copper wire with a columnar structure, and its cross section is square, but the cross section is not limited to a square, and may also be circular, triangular, rectangular, rhombus, etc. The shape with a symmetrical structure, the length is 10mm to 50mm, and the gate dielectric layer is silicon dioxide (SiO 2 ) film, the conductive channel layer is an indium tin oxide (ITO) film, the source electrode and the drain electrode are Al electrodes respectively, and the central axis parallel to the length direction of the gate copper wire is the axis, and one end of the gate is used as the gate Except for the contact part, the periphery of the rest of the grid is covered with a gate dielectric layer, and the periphery of the gate dielectric layer is covered with a conductive channel layer, and the source electrode and the drain electrode are respectively arranged on the periphery of the c...
Embodiment 3
[0045] This embodiment provides a thin film transistor. The gate of the thin film transistor is a carbon fiber with a columnar structure, and its cross section is circular, but the cross section is not limited to circular, and may also be triangular, square, rectangular, rhombus, etc. The shape has a symmetrical structure, the length is 10mm to 50mm, the gate dielectric layer is an aluminum oxide (Al2O3) film, the conductive channel layer is an organic semiconductor pentacene film, the source electrode and the drain electrode are respectively Ag electrodes, and the gate The central axis of the carbon fiber parallel to the length direction is the axis, one end of the gate is used as the gate contact part, and the rest of the gate is covered with a gate dielectric layer, and the periphery of the gate dielectric layer is covered with a conductive channel layer. The source electrode and the drain electrode are respectively arranged on the periphery of the conductive channel layer. ...
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Abstract
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