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Method for preparing electrical property-controllable zinc oxide (ZnO) piezoresistor material at low temperature

A technology for varistors and electrical properties, applied in the field of zinc oxide varistor materials with controllable electrical properties at low temperature, can solve the problems of increased production costs, high sintering temperature, and unfavorable industrialization promotion

Inactive Publication Date: 2012-05-30
INST OF PROCESS ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] From the above materials, it can be seen that the following disadvantages exist in the preparation process of traditional zinc oxide varistors: on the one hand, the sintering temperature is high, the energy consumption is large, which greatly increases the production cost, which is not conducive to industrialization; on the other hand, most of the doped The method adopts a process of one-time doping and high-temperature sintering. While obtaining semiconducting zinc oxide grains, a high-impedance grain boundary layer is formed around the zinc oxide grains to obtain non-ohmic characteristics, thereby making the capacitance of the zinc oxide varistor The improvement and improvement of comprehensive electrical properties such as performance, pressure-sensitive performance and nonlinear characteristics are subject to certain limitations.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0079] Take an appropriate amount of commercially available micron-sized ZnO, SiO 2 、Cr 2 o 3 , MnO 2 、 Bi 2 o 3 , B 2 o 3 According to the proportions of 10%, 24%, 9%, 11%, 26% and 20% by weight, put them into a high-energy ball mill, add absolute ethanol to carry out uniform ball milling, and add 1% by mass of poly Ammonium methacrylate dispersant, wherein the mass ratio of zirconia grinding balls to powder is 18:1, the total amount of balls, powder and absolute ethanol is 2 / 3 of the volume of the ball milling tank, the rotating speed is 550 rev / min, ball milling The time is 20 hours, and the slurry after ball milling is fully dried in a blast drying oven at 200° C. to obtain uniformly dried mixed powder. The mixed powder is pre-sintered in a box furnace, the heating rate is 5°C / min, the sintering temperature is 1200°C, and the holding time is 1 hour. After the product is quenched in water, it is placed in a blast drying oven at 200°C. Fully dry, put the dried produc...

Embodiment 2

[0083] Take an appropriate amount of commercially available nano-scale ZnO, SiO 2 、Co 2 o 3 , MnO 2 、 Bi 2 o 3 , V 2 o 5 , B 2 o 3 According to the proportions of 10%, 22%, 8%, 10%, 27%, 8% and 15% by weight, put them into the high-energy ball mill, add absolute ethanol for uniform ball milling, and add 0.5% by mass % ammonium citrate dispersant, wherein the mass ratio of zirconia balls and powder is 18:1, the total amount of balls, powder and absolute ethanol is 2 / 3 of the volume of the ball mill jar, and the rotating speed is 400 rpm, The ball milling time is 3 hours, and the slurry after ball milling is fully dried in a blast drying oven at 50° C. to obtain uniformly dried mixed powder. The mixed powder is pre-sintered in a box furnace, the heating rate is 1°C / min, the sintering temperature is 600°C, and the holding time is 6 hours. After the product is quenched in water, it is placed in a blast drying oven at 50°C. Fully dry, put the dried product into a high-ene...

Embodiment 3

[0087] The high-impedance nano-sintered material G1 was prepared according to the method in Example 1, except that in the process of preparing G1 in this example, the mixed powder after ball milling and drying was kept at 1000°C for 2 hours, and the prepared high-impedance nano-sintered material Denote it as G3. Commercially available micron-sized ZnO, commercially available nano-sized Co 2 o 3 , SnO prepared by hydrothermal method 2Nanoparticles and high-impedance nano-sintered material G3 were weighed according to the proportions of 85%, 0.5%, 3% and 11.5% by weight in sequence, and then put into a high-energy ball mill and added absolute ethanol for uniform ball milling. Duramax D3005 ammonium polyacrylate dispersant with a percentage content of 1%, wherein the mass ratio of zirconia grinding balls to powder is 18:1, and the total amount of balls, powder and absolute ethanol is 2 / 3 of the volume of the ball mill tank , the rotating speed is 500 rev / min, the ball milling ...

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Abstract

A method for preparing an electrical property-controllable zinc oxide (ZnO) piezoresistor material at a low temperature comprises preparing a high-impedance sintered nanomaterial composed of one or more oxides by solid-phase sintering; subjecting micron-scale ZnO, said high-impedance sintered nanomaterial and at least one nano-scale doped oxide at a given proportion to uniform ball milling by a high-energy ball milling process; sintering at 800-1,100 DEG C.; and adjusting the proportion between the high-impedance sintered material and the doped oxide to obtain a ZnO piezoresistor material with excellent comprehensive electric properties and controllable properties, thus improving the electric potential gradient and the nonlinear property of a ZnO piezoresistor. The inventive method is simple, has highly controllable process, low energy consumption and high yield, and is suitable for industrial production.

Description

technical field [0001] The invention belongs to the technical field of piezoresistive material preparation, in particular, the invention relates to a method for preparing a zinc oxide piezoresistive material with controllable electrical properties at low temperature. Background technique [0002] A varistor is a resistor whose resistance value changes with voltage within a certain current and voltage range, or "resistance value is sensitive to voltage". The English name is "Voltage Dependent Resistor" abbreviated as "VDR", or "Varistor". The resistor material of the varistor is a semiconductor, so it is a variety of semiconductor resistors. "Zinc oxide" (ZnO) varistors, which are widely used now, are composed of divalent element (Zn) and hexavalent element oxygen (O) as the main material. So from the material point of view, the zinc oxide varistor is a "II-VI oxide semiconductor". [0003] Since its appearance in 1968, zinc oxide varistors have been widely used as overvol...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/622
Inventor 谭强强徐宇兴
Owner INST OF PROCESS ENG CHINESE ACAD OF SCI
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