Method for granulating and forming silicon carbide fine powder and silicon carbide granule

A technology of silicon carbide fine powder and silicon carbide particles, which is applied in the granulation and molding of silicon carbide fine powder, and the field of silicon carbide particles, can solve the problems of furnace explosion, product quality decline, waste, etc., and achieve the benefit of airflow and heat conduction, Increased recycling and energy saving effects
CN102489218AInactive Publication Date: 2012-06-13朱胜利

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
朱胜利
Publication Date
2012-06-13
Estimated Expiration
Not applicable · inactive patent
Patent Text Reader

Abstract

The invention relates to a method for granulating and forming silicon carbide fine powder and a silicon carbide granule. The method comprises the following steps of: 1, selecting the silicon carbide fine powder; 2, preparing adhesive solution; 3, mixing the silicon carbide fine powder which is obtained in the step 1 and the adhesive solution which is obtained in the step 2 according to a mass ratio of 10: 1-2:1; and 4, granulating and forming the mixture which is obtained in the step 3 by using mechanical granulating equipment. The invention provides the method for granulating and forming the silicon carbide fine powder, which has the advantages that furnace jet and furnace explosion can be prevented, the utilization ratio of the silicon carbide fine powder is high, the energy consumption is low, the degree of the environment pollution is low and the operation is simple and convenient, and the silicon carbide granule.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the field of material preparation, and relates to a molding method of granular materials, in particular to a granulation molding method of silicon carbide fine powder and silicon carbide particles. Background technique

[0002] In the production and application of silicon carbide, there will be great waste in two aspects: First, in the process of processing silicon carbide crystal blocks into abrasives, especially in the processing of solar wafer cutting blades, 40% of the raw materials will be generated Above fine powder; The 2nd, can produce a large amount of used waste green silicon carbide cutting material fine powders in the cutting process of solar wafer. Except for a very small amount of these fine powders that can be used reasonably, most of them are used to be processed into lower-grade refractory materials. During the production process of silicon carbide, its basic reaction is: SiO 2 +3c=Sic+2CO-498kJ, because sili...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More