Elastic compound metal heat interface material and preparation method thereof

A technology of thermal interface materials and composite metals, applied in the direction of heat exchange materials, chemical instruments and methods, etc., can solve the problem of high cost, achieve low cost, small interface thermal resistance, and ensure the effect of mechanical and physical properties

Inactive Publication Date: 2012-06-20
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since indium is a strategic resource, its use is also very expensive
Therefore, how to reduce the cost of indium as a thermal interface material and maintain good performance has become a difficult problem

Method used

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  • Elastic compound metal heat interface material and preparation method thereof
  • Elastic compound metal heat interface material and preparation method thereof
  • Elastic compound metal heat interface material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] An elastic composite metal thermal interface material is composed of indium and a through-hole porous metal sheet. The indium is filled inside the through-hole porous metal and covers the upper and lower surfaces of the through-hole porous metal sheet.

[0023] The through-hole porous metal sheet is one of sheet-like porous copper, porous silver, porous zinc, porous titanium, porous magnesium, porous aluminum, and porous gold. The thickness of the through-hole porous metal sheet is 60-200 microns, for example, can be selected as 80 microns, 120 microns, 150 microns, 160 microns, 180 microns, 190 microns, the porosity of the through-hole porous metal (so-called porosity refers to the Volume as a percentage of the apparent total volume of the porous metal) is 30%-95%, for example, it can be 35%, 40%, 50%, 60%, 70%, 80%, 90%, and the pore size is 100 nanometers to 30 microns, For example, 200 nanometers, 400 nanometers, 600 nanometers, 800 nanometers, 1 micrometer, 5 micro...

Embodiment 2

[0026] An elastic composite metal thermal interface material, which is composed of indium and porous copper sheets with through holes. The thickness of the porous copper sheets is 160 microns, the porosity is 90%, and the pore diameter is 5 microns. Indium is filled in the porous copper sheets through the holes. Inside, there is almost no gap in the through-hole porous copper, and the upper and lower surfaces of the through-hole porous metal sheet are covered, and the thickness of indium on the upper and lower surfaces is 2-10 microns. An anti-oxidation layer palladium or the like may be provided on the surface of the through-hole porous copper sheet, which is deposited by electroplating. This thermal interface material is applied by conventional methods, and its interface thermal resistance is less than 10mm due to the good interface contact 2 K / W (measured by ASTM-D5470 standard).

Embodiment 3

[0028] A method for preparing the elastic composite metal thermal interface material, the first step is to prepare a through-hole porous metal sheet, the thickness of the through-hole porous metal sheet is 60-200 microns, for example, it can be selected as 80 microns, 120 microns, or 150 microns , 160 microns, 180 microns, 190 microns, the porous metal sheet with through holes is one of sheet-like porous copper, porous silver, porous zinc, porous titanium, porous magnesium, porous aluminum, and porous gold. The preparation method adopts one of dealloying, sol-gel method, sintering method and the like. The porosity of the obtained through-hole porous metal (the so-called porosity refers to the percentage of the volume of the pores in the apparent total volume of the porous metal) is 30%-95%, for example, it can be 35%, 40%, 50%, 60%, 70%, 80%, 90%.

[0029] In this scheme, the specific steps of preparing the through-hole porous metal sheet by the dealloying method are as follo...

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Abstract

The invention belongs to the technical field of a heat interface material and discloses an elastic compound metal heat interface material. The elastic compound metal heat interface material is formed by compounding indium and a through-hole porous metal sheet, wherein the indium is filled in the through-hole porous metal sheet and covers the upper and lower surfaces of the through-hole porous metal sheet. The invention also discloses a preparation method of the elastic compound metal heat interface material. The method comprises the following steps: preparing the through-hole porous metal sheet at first; adding a proper amount of indium; heating for smelting indium so that smelted indium fills in the through-hole porous metal sheet and covers the upper and lower surfaces of the through-hole porous metal sheet; and finally cooling, thereby obtaining the elastic compound metal heat interface material. The two surfaces of the through-hole porous metal sheet are both through-hole porous metal and the middle core of the through-hole porous metal sheet is a metal solid. The compound material of the through-hole porous metal sheet and indium has higher elasticity and flexibility in the direction vertical to a mounting surface, so that the compound material can be quickly filled in bigger gaps caused by heat sink and an uneven silicon surface, the interface can be completely filled and the heat resistance of the interface can be kept.

Description

technical field [0001] The invention relates to a thermal interface material and technology, in particular to an elastic composite metal thermal interface material and a preparation method thereof. Background technique [0002] With the rapid development of modern microelectronics, the functional density, integration level and design power consumption of integrated circuit chips are constantly increasing, but the volume is constantly decreasing, and the thermal power density in the chip is constantly increasing. The continuous increase of thermal power density will easily lead to the continuous increase of temperature, which will reduce the performance and reliability of integrated circuit chips. Therefore, the problem of heat dissipation has become a major problem in the high-density packaging process of modern microelectronics. In the prior art, heat sinks are usually used to manage heat sources such as high-power components, such as chips. Therefore, the contact interfa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K5/14C22C1/08
Inventor 尚金堂刘靖东王亭亭罗新虎
Owner SOUTHEAST UNIV
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