Flexible stainless steel substrate copper-indium-gallium-selenium film battery and preparation method thereof
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A copper indium gallium selenide and thin-film battery technology, applied in the field of solar cells, can solve the problems of complicated equipment operation, skin explosion, battery peeling, etc., and achieve the effect of simplifying the preparation process
Inactive Publication Date: 2012-06-20
NANKAI UNIV
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Problems solved by technology
Although currently using this battery structure, a battery with an efficiency of 17.5% has been developed, but the barrier layer has brought many problems
On the one hand, poor bonding between the barrier material and the stainless steel substrate and the Mo bottom electrode will lead to the failure of stainless steel substrate CIGS cells.
On the other hand, the barrier layer with good barrier effect needs to have a thickness of at least 3 μm, and the equipment used is mainly the PECVD method, which is expensive, has a low deposition rate, and complex operation of the equip
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Embodiment 1
[0035] A method for preparing a copper indium gallium selenide thin film solar cell with a flexible stainless steel substrate, the steps are as follows:
[0036] 1) Put the SUS304 stainless steel foil with a thickness of 0.08mm into the vacuum chamber after ultrasonic cleaning, heat treatment at 400°C for 10 minutes, and the vacuum degree is 5×10 -4 Pa;
[0037] 2) Sputter the double-layer Mo back electrode by magnetron sputtering, the operating current is 1.2 amperes, the sputtering pressure of the first layer is 1.2 Pa, the thickness is 0.1 μm, the sputtering pressure of the second layer is 0.1 Pa, and the thickness is 1 μm;
[0038] 3) Put the stainless steel substrate with the back electrode into the co-evaporation vacuum chamber at a vacuum degree of 6×10 -4 At Pa, degas the substrate at 400°C for 15 minutes, then increase the substrate temperature to 550°C, raise the temperature of the Se evaporation source furnace to 230°C, and anneal for 20 minutes in a Se atmosphere ...
Embodiment 2
[0045] A method for preparing a copper indium gallium selenide thin film solar cell with a flexible stainless steel substrate, the steps are as follows:
[0046] 1) Put the SUS304 stainless steel foil with a thickness of 0.08mm into the vacuum chamber after ultrasonic cleaning, heat treatment at 500°C for 10 minutes, and the vacuum degree is 5×10 -4 Pa;
[0047] 2) Sputter the double-layer Mo back electrode by magnetron sputtering, the operating current is 1.2 amperes, the sputtering pressure of the first layer is 1.2 Pa, the thickness is 0.1 μm, the sputtering pressure of the second layer is 0.1 Pa, and the thickness is 1 μm;
[0048] 3) Put the stainless steel substrate with the back electrode into the co-evaporation vacuum chamber at a vacuum degree of 6×10 -4 At Pa, degas for 15 minutes at a substrate temperature of 400°C, then raise the substrate temperature to 550°C, raise the temperature of the Se evaporation source furnace to 230°C, and anneal for 20 minutes in a Se a...
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Abstract
The invention relates to a flexible stainless steel substrate copper-indium-gallium-selenium film battery which has a combined structure comprising a stainless steel foil substrate and a multi-layer film, wherein the multi-layer film comprises a bottom electrode, an absorption layer, a buffer layer, an intrinsic ZnO layer, an aluminum-doped ZnO layer and a gate electrode which are superimposed together in order. A preparation method of the flexible stainless steel substrate copper-indium-gallium-selenium film battery comprises the following steps of: depositing a double-layer Mo back electrode on the stainless steel substrate by adopting a magnetron sputtering method; preparing a copper-indium-gallium-selenium absorption layer by adopting a three-step co-evaporation method; preparing a CdS buffer layer by adopting a chemical water bath method; preparing the intrinsic ZnO layer and the aluminum-doped ZnO layer by adopting the magnetron sputtering method; and preparing a Ni/Al gate electrode by adopting a thermal evaporation method. The flexible stainless steel substrate copper-indium-gallium-selenium film battery and the preparation method thereof disclosed by the invention have the advantages that: a copper-indium-gallium-selenium film with a preferential growth structure (220) is prepared by using the method, so that the problem that the bonding force between a blocking layer and other contact layers is poor is solved, and the preparation process is simplified; and under the condition of AM1.5 illumination, the battery efficiency of the film solar battery is more than 11.0 percent, and the film solar battery plays an important promotion role when applied to the field of solar batteries.
Description
technical field [0001] The invention relates to the technical field of solar cells, in particular to a copper indium gallium selenium thin film battery with a flexible stainless steel substrate and a preparation method thereof. Background technique [0002] In response to the crisis of global warming, the deterioration of the human ecological environment and the shortage of conventional energy, especially the convening of the Copenhagen World Climate Conference in December 2009, more and more countries have begun to vigorously develop solar energy utilization technology. my country's "solar energy action plan" plans to make solar energy an important energy source in my country around 2050. Solar photovoltaic power generation is a zero-emission clean energy, which has the advantages of safety, reliability, no noise, no pollution, inexhaustible resources, short construction period, and long service life, so it has attracted much attention. Cu(In,Ga)Se 2 (CIGS) is a p-type se...
Claims
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