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Lattice mismatch three-section battery epitaxial growth method

A technology for solar cells and epitaxial growth, which is applied in the field of III-V solar cells and can solve problems such as the inability to meet the needs of high-efficiency solar cells

Inactive Publication Date: 2012-06-20
傲普托通讯技术有限公司
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Problems solved by technology

[0009] Introducing the gradient buffer layer growth technology in the epitaxial growth of lattice-mismatched solar cells, the threading dislocation density on the surface of the epitaxial layer still reaches 10 6 —10 7 / cm 2 , so the existing lattice-mismatched solar cell epitaxial growth technology cannot meet the needs of future high-efficiency solar cells

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  • Lattice mismatch three-section battery epitaxial growth method
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Embodiment Construction

[0051] Below in conjunction with the accompanying drawings and Ga 0.40 In 0.60 P / Ga 0.88 In 0.12 The embodiment of As / Ge triple-junction solar cell further illustrates the epitaxial growth method of the present invention.

[0052] figure 1 A lattice-mismatched triple-junction solar cell is shown, consisting of a Ge bottom cell, a Ga 0.88 In 0.12 As battery, Ga 0.40 In 0.60 The P-top cell is composed of three sub-cells connected by two tunnel junctions to form a monolithic series structure. A p-type single crystal Ge substrate 100 with a thickness of 170 μm and a doping concentration of 5×10 17 / cm 3 , the crystal orientation is (100) to (110) 6°, grown by MOCVD method, the growth steps are as follows:

[0053] 1) n-Ge bottom cell emission region 110 Phosphorus diffusion is performed on the p-Ge substrate to form the p-Ge bottom cell base region / n-Ge bottom cell emission region, the thickness of the n-Ge emission region is 0.15 μm, doped Concentration 5×10 18 / cm ...

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Abstract

The invention relates to a lattice mismatch three-section solar battery epitaxial growth method. A solar battery comprises a Ge bottom battery, a Ga1-xInxAs middle battery, and Ga1-yInyP top battery three-section sub batteries, wherein the sub batteries are connected through a tunneling so as to form a single chip cascade structure; and a p-GaAsP / Ga-1.2xIn1.2xAs superlattice is inserted in a middle battery Ga1-xInxAs base region initial epitaxial layer, and the inserted superlattice is subjected to annealing treatment. The growth method provided by the invention has the advantages that the p-GaAsP / Ga-1.2xIn1.2xAS superlattice is inserted in the middle battery Ga1-xInxAs base region initial epitaxial layer, and the inserted superlattice is subjected to the annealing treatment, thereby effectively preventing a penetrating dislocation structure surface layer from spreading; and the XRD(X-ray powder diffraction)and battery photovoltaic performance test result proves that the crystal quality of a three-section battery epitaxial layer is good, and battery photoelectric transformation efficiency is high.

Description

technical field [0001] The invention relates to III-V family solar cells, in particular to an epitaxial growth method for lattice-mismatched triple-junction solar cells. Background technique [0002] The development of solar photovoltaic power generation has become an important way for mankind to solve future energy problems. Photovoltaic power generation has gone through the first generation of crystalline silicon cells and the second generation of thin film cells. The current industrialization process is gradually turning to efficient concentrated solar power (CPV) system power generation. Compared with the previous two generations of cells, the CPV photovoltaic technology based on multi-junction gallium arsenide (GaAs) solar cells can basically realize the full spectrum absorption of the solar spectrum due to the use of pn junctions with different band gaps. The monolithic tandem solar cell based on the base system has high photoelectric conversion efficiency, and the req...

Claims

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Application Information

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IPC IPC(8): H01L31/078H01L31/0352H01L31/18
CPCY02E10/50Y02P70/50
Inventor 何清华郑炳熙王文郑宝用
Owner 傲普托通讯技术有限公司
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