Method for metalizing surface of aluminum nitride ceramic

Abstract

The invention discloses a method for metalizing the surface of aluminum nitride ceramic, and belongs to the technical field of ceramic materials. The method comprises the following steps of: cleaning the surface of ceramic; baking at the temperature of between 100 and 150 DEG C in a drying furnace for 4 to 4.5 hours; continuously baking, namely baking at the temperature of 150 DEG C for 15 minutes; and forming a first metal film layer by a film forming process by using Ti, Zr or Ta, forming a second metal film by using Cu, Au, W, Mo, Ni, Ta, Zr, W-Cu alloy, or Mo-Cu alloy, and forming a third metal film layer by using Ni, Au or Cu, wherein the thickness of the third metal film layer is 1 to 5 mu m. According to the method for metalizing the surface of the aluminum nitride ceramic, the first film layer and the second film layer are formed by optimally adopting a magneto-controlled sputter coating method, and the third film layer is formed by optimally adopting an electroplating or chemical plating method. Strong adhesion with ceramic matrix can be obtained, and the welding intensity and reliability on a ceramic seal component can be ensured by the method for metalizing multiple layers of metal films.

Description

technical field [0001] The invention belongs to the field of ceramic materials, in particular to a method for surface metallization of aluminum nitride ceramics in the manufacture of microwave vacuum electronic devices. Background technique [0002] As we all know, the thermal conductivity of aluminum nitride ceramics is 7 to 8 times that of alumina ceramics, its mechanical strength and dielectric strength are better than alumina ceramics, and its dielectric properties are similar to alumina ceramics; The high thermal conductivity of beryllium ceramics does not have the toxic side effects of beryllium oxide ceramics, so it has become an ideal substitute for alumina and beryllium oxide ceramics during use. Aluminum nitride ceramics have important applications in power electronic devices, automobile industry, microwave vacuum devices and other fields. [0003] As one of the indispensable key materials for the manufacture of microwave vacuum devices, ceramic materials are main...

AI Technical Summary

Problems solved by technology

However, the above method is only suitable for planar metallization, and the bonding strength between the metallization layer and the substrate is low, so the metallization method of aluminum nitride ceramics reported above is not suitable for use in microwave vacuum electronic devices.

[0005] It is well known in practice that the metallization of aluminum nitride ceramics is more difficult than the metallization of other oxides such as alumina and beryllium oxide ceramics

First of all, aluminum nitride ceramics are covalently bonded, with low chemical reactivity, and it is difficult to chemically react with other materials to combine with each other.

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