TiAlSiN-DLC composite film and its preparation method
A composite thin film, 30min technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of loss of protective film function, failure to meet high temperature wear resistance and friction reduction performance of material surface, peeling and other problems, to achieve Good high temperature oxidation resistance, good self-lubricating wear resistance and anti-friction performance, high microhardness and wear resistance
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Embodiment 1
[0028] The process of preparing TiAlSiN-DLC composite film on the surface of ordinary high-speed steel substrate W18Cr4V:
[0029] Such as figure 1 As shown, the TiAlSiN-DLC composite thin film of this embodiment includes a TiAlSiN layer 2 attached to the surface of the metal substrate 1, a C-doped TiAlSiN layer 3 attached to the TiAlSiN layer 2, and a C-doped TiAlSiN layer 3 attached DLC layer 4; the metal substrate is an ordinary high-speed steel substrate, the thickness of the TiAlSiN layer 2 is 0.8 μm, the thickness of the C-doped TiAlSiN layer 3 is 0.3 μm, and the thickness of the DLC layer 4 is 1 μm .
[0030] The preparation method of the TiAlSiN-DLC composite thin film of the present embodiment is:
[0031] Step 1. Pretreatment of the high-speed steel substrate: Clean the high-speed steel substrate with a metal cleaning agent to remove oil, and then use 400# metallographic sandpaper, 600# metallographic sandpaper, and 1000# metallographic sandpaper on the degreased h...
Embodiment 2
[0039] The process of preparing TiAlSiN-DLC composite film on the surface of Ni-based superalloy GH4037 substrate:
[0040] Such as figure 1 As shown, the TiAlSiN-DLC composite thin film of this embodiment includes a TiAlSiN layer 2 attached to the surface of the metal substrate 1, a C-doped TiAlSiN layer 3 attached to the TiAlSiN layer 2, and a C-doped TiAlSiN layer 3 attached DLC layer 4; the metal substrate is Ni-based superalloy GH4037, the thickness of the TiAlSiN layer 2 is 2 μm, the thickness of the C-doped TiAlSiN layer 3 is 1 μm, and the thickness of the DLC layer 4 is 2.5 μm .
[0041] The preparation method of the TiAlSiN-DLC composite thin film of the present embodiment is:
[0042] Step 1. Pretreatment of Ni-based superalloy GH4037 substrate: Pretreat the surface of Ni-based superalloy GH4037 substrate using the same pretreatment method as step 1 in Example 1;
[0043] Step 2. Activation of the surface of the Ni-based superalloy GH4037 substrate: Place the pret...
Embodiment 3
[0050] Preparation of TiAlSiN-DLC Composite Thin Film on the Surface of Titanium Alloy TC4 Substrate
[0051] Such as figure 1 As shown, the TiAlSiN-DLC composite thin film of this embodiment includes a TiAlSiN layer 2 attached to the surface of the metal substrate 1, a C-doped TiAlSiN layer 3 attached to the TiAlSiN layer 2, and a C-doped TiAlSiN layer 3 attached DLC layer 4; the metal substrate is titanium alloy TC4, the thickness of the TiAlSiN layer 2 is 1.5 μm, the thickness of the C-doped TiAlSiN layer 3 is 0.8 μm, and the thickness of the DLC layer 4 is 2 μm.
[0052] The preparation method of the TiAlSiN-DLC composite thin film of the present embodiment is:
[0053] Step 1, pretreatment of TC4 titanium alloy: adopt the same pretreatment method as step 1 in embodiment 1 to pretreat the surface of TC4 titanium alloy substrate;
[0054] Step 2. Activation of the surface of the TC4 titanium alloy: place the pretreated TC4 titanium alloy in the vacuum chamber of the magne...
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